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Exciton Luminescence of Single-Crystal GaN

Published online by Cambridge University Press:  21 February 2011

J.R. Müllhaüser ,
O. Brandt ,
H. Yang  and
K.H. Ploog
J.R. Müllhaüser
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117-Berlin, Germany, jochen@pdi.wias-berlin.de
O. Brandt
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117-Berlin, Germany, jochen@pdi.wias-berlin.de
H. Yang
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117-Berlin, Germany, jochen@pdi.wias-berlin.de
K.H. Ploog
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117-Berlin, Germany, jochen@pdi.wias-berlin.de
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Abstract

Detailed photoluminescence (PL) studies of high-quality MBE-grown single-crystal cubic and hexagonal GaN are presented. We identify free and bound exciton recombination. By means of a line-shape analysis, we quantitatively analyze our spectra, which were taken as a function of temperature (T = 4 - 300 K) and excitation density (Pex = 0.3 - 200W/cm2). We show the dominant recombination channel at 300 K to be free-excitonic in nature with an internal small-signal quantum efficiency of 6 · 10−3 for both cubic and hexagonal material. Based on a three-level model, activation energies for exciton dissociation are evaluated. Radiative (τrad ≈ 2 ns) and nonradiative lifetimes (τe ≈ 1μs, τh ≈ 20 ps) are determined, where in the latter case, electron and hole trapping are considered separately. Furthermore, we show that the dominant nonradiative recombination center, being a hole trap, saturates at Pex ≥ 20 W/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 607
Copyright
Copyright © Materials Research Society 1996

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References

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