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Experimental Measurement of Transmission Electron Microscope Specimen Temperature during Ion Milling

Published online by Cambridge University Press:  16 February 2011

D. Bahnck  and
R. Hull
D. Bahnck
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. Hull
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Semiconductor materials and devices are commonly investigated by transmission electron microscopy to obtain microstructural information. The results are useful only when a thinned sample is representative of the parent material. The technique of ion milling can introduce artifacts arising from beam heating during specimen preparation. A survey of specimen temperatures during argon and iodine ion milling of silicon, indium phosphide and gallium arsenide was made by encasing a thermocouple in a specimen and varying ion beam energy and beam angle of incidence. The results indicate, for example, that the typical temperature of silicon specimen preparation is less than 140°C. By decreasing the beam energy and incident angle, the milling temperature can be reduced. Design improvements on the ion mill can also sink heat away from the specimen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 199: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials II , 1990 , 253
Copyright
Copyright © Materials Research Society 1990

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References

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