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Fabrication and Characterization of Pzt Thin-Film on Bulk Micromachined Si Motion Detectors

Published online by Cambridge University Press:  10 February 2011

T.J. Garino ,
B.A. Tuttle ,
G. Laguna  and
P. Clem
T.J. Garino
Affiliation:
Sandia National Laboratories, MS-141 1, Albuquerque, NM 87185-1411
B.A. Tuttle
Affiliation:
Sandia National Laboratories, MS-141 1, Albuquerque, NM 87185-1411
G. Laguna
Affiliation:
Sandia National Laboratories, MS-141 1, Albuquerque, NM 87185-1411
P. Clem
Affiliation:
Sandia National Laboratories, MS-141 1, Albuquerque, NM 87185-1411
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Abstract

Motion detectors consisting of Pb(ZrxTi(1−x))O3 (PZT) thin films, between platinum electrodes, on micromachined silicon compound clamped-clamped or cantilever beam structures were fabricated using either hot KOH or High Aspect Ratio Silicon Etching (HARSE) to micromnachine the silicon. The beams were designed such that a thicker region served as a test mass that produced stress at the top of the membrane springs that supported it when the object to which the detector was mounted moved. The PZT film devices were placed on these membranes to generate a charge, or a voltage, in response to the stress through the piezoelectric effect. Issues of integration of the PZT device fabrication process with the two etching processes are discussed. The effects of PZT composition and device geometry on the response of the detectors to motion is reported and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 629
Copyright
Copyright © Materials Research Society 1999

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References

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