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Fabrication and Structural and Optical Properties of Amorphous Si/SiO2 Superlattices on (100) Si

Published online by Cambridge University Press:  15 February 2011

J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA
D.J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA
Z.-H. Lu
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, KIA OR6, CANADA
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Abstract

We report the growth and characterization of amorphous Si (a-Si)/SiO2 superlattices on (100) Si. The a-Si layers (thickness varying from 1 to 10 nm) were vacuum-deposited at room temperature by molecular beam epitaxy while the SiO2 layers (1 nm) were grown by an ex-situ UV-ozone treatment. This procedure was repeated six times to produce periodic multilayer structures. The chemical modulation of these structures was confirmed by transmission electron microscopy and depth profiling using Auger electron spectroscopy. X-ray specular reflectivity showed that the structures have a well defined periodicity. The a-Si layers have a density approaching (>95 %) that of c-Si and an interfacial roughness that increases with the a-Si layer thickness. The Raman spectrum from the Si layers of all samples shows broad peaks near 150, 310 and 470 cm−1 that are typical of a-Si. On annealing at high temperatures, the three Raman bands decrease in intensity, while the 470 cm−1 band also shifts to higher frequency and becomes narrower. After annealing for 30 s at 1100 °C, the a-Si bands are weak and the 470 cm−1 band is merging with the c-Si 520 cm−1 line, indicating that partial re-crystallization of the Si layers has occurred. The room temperature light emission properties of these nanostructures in the green to red wavelength region is reported. The luminescence shifts to longer wavelength with increasing a-Si layer thickness, consistent with a quantum confinement mechanism.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
2. Tsu, R., in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 Edited by Helms, C.R. and Deal, B.E. (Plenum Press, New York, 1993), pp. 353356.Google Scholar
3. Lockwood, D.J., Solid State Commun. 92, 101 (1994).Google Scholar
4. Zhu, J.G., White, C.W., Budai, J.D., Withrow, S.P. and Chen, Y. in Microcrystalline and Nanocrystalline Semiconductors edited by Brus, L., Collins, R.W., Hirose, M., Koch, F., and Tsai, C.C. (Mat. Res. Soc. Proc. 358, Pittsburgh, PA, 1995).Google Scholar
5. Shimizu-Iwayama, T., Fujita, K., Nakao, S., Saitoh, K., Fujita, T. and Itoh, N., J. Appl. Phys. 75, 7779 (1994).Google Scholar
6. Siegele, R., Weatherly, G.C., Hangen, H.K., Lockwood, D.J. and Howe, L.M., Appl. Phys. Lett. 66, 1319 (1995).Google Scholar
7. Liu, X., Wu, X., Bao, X. and He, Y., Appl. Phys. Lett. 64, 220 (1994).Google Scholar
8. Maeda, Y., Tsukamoto, N., Yazawa, Y., Kanemitsu, Y. and Masumoto, Y., Appl. Phys. Lett. 59, 3168 (1991).Google Scholar
9. Abeles, B. and Tiedie, T., Phys. Rev. Lett. 51, 2003 (1983).Google Scholar
10. Jiang, J., Chen, K., Huang, X., Li, Z. and Feng, D., Solid State Commun. 92, 227 (1994).Google Scholar
11. Tong, S., Liu, X-N and Bao, Xi-m, Appl. Phys. Lett. 66, 469 (1995).Google Scholar
12. Baribeau, J.-M., Lockwood, D.J., Dharma-wardana, M.W.C., Rowell, N.L., McCaffrey, J.P., Thin Solid Films 183, 17 (1989).Google Scholar
13. Vig, J.R., in Handbook of Semiconductor Wafer Cleaning Technology. Science. Technoloev and Applications. Edited by Kem, W. (Noyes Publications, Park Ridge, 1993) pp. 233273.Google Scholar
14. Parratt, L.G., Phys. Rev. 95, 359 (1954).Google Scholar
15. Croce, P. and Névot, L., Rev. Phys. Appl. 11, 113 (1976).Google Scholar
16. Zhang, P.X., Mitchell, I.V., Tong, B.Y., Schultz, P.J. and Lockwood, D.J., Phys. Rev. B 50, 17080 (1994).Google Scholar
17. Brodsky, M.H., Kaplan, D. and Ziegler, J.F., Appl. Phys. Lett. 21, 305 (1972).Google Scholar
18. Lucas, C.A., Hatton, P.D., Bates, S., Ryan, T.W., Miles, S. and Tanner, B.K., J. Appl. Phys. 63, 1936 (1988).Google Scholar
19. Cowley, R.A. and Lucas, C.A., Physique, J., Suppl. 10, 50, C7145 (1989).Google Scholar
20. See, for example, Beeman, D., Tsu, R., and Thorpe, M.F., Phys. Rev. B 32, 874 (1985).Google Scholar
21. Lockwood, D.J., Aers, G.C., Allard, L.B., Bryskiewicz, B., Charbonneau, S., Houghton, D.C., McCaffrey, J.P. and Wang, A., Can. J. Phys. 70, 1184 (1992).Google Scholar
22. Properties of Amorhous Silicon, 2nd Ed., (Institute of Electrical Engineers, London, 1989), pp. 269286.Google Scholar