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Fabrication,Transport and Raman Studies of Pulsed Laser Deposited Al/Ga Doped PBCO Thin Films

Published online by Cambridge University Press:  31 January 2011

Hom R Kandel ,
Tar-Pin Chen ,
Hye-Won Seo ,
Milko Iliev ,
Paritosh Wadekar ,
Jing-Biao Cui ,
Shouzheng wang ,
Fumiya Watanabe ,
Quark Chen  and
Zhongrui Li
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Hom R Kandel
Affiliation:
hrkandel@ualr.eduhomkandel@gmail.com, University of Arkansas at Little Rock, Applied Science, Little Rock, Arkansas, United States
Tar-Pin Chen
Affiliation:
txchen@ualr.edu, University of Arkansas at Little Rock, Department of Physics and Astronomy, Little Rock, Arkansas, United States
Hye-Won Seo
Affiliation:
hwseo@ualr.edu, University of Arkansas at Little Rock, Department of Physics and Astronomy, Little Rock, Arkansas, United States
Milko Iliev
Affiliation:
miliev@uh.edu, Univesity of Houston, Texas center for superconductivity and Physics department, Houston, Arkansas, United States
Paritosh Wadekar
Affiliation:
Paritosh.wadekar@gmail.com, National Sun Yat-sen University, Physics, Kaohsiung, Kaohsiung, Taiwan, Province of China
Jing-Biao Cui
Affiliation:
jxcui@ualr.edu, University of Arkansas at Little Rock, Department of Physics and Astronomy, Little Rock, Arkansas, United States
Shouzheng wang
Affiliation:
sxwang@ualr.edu, University of Arkansas Little Rock, Physics, Little Rock, Arkansas, United States
Fumiya Watanabe
Affiliation:
fxwatanabe@ualr.edu, University of Arkansas at Little Rock, Nanotechnology center, Little Rock, Arkansas, United States
Quark Chen
Affiliation:
quarkchen@gmail.com, National Sun Yat-sen University, Physics, Kaohsiung, Kaohsiung, Taiwan, Province of China
Zhongrui Li
Affiliation:
zxli3@ualr.edu, University of Arkansas at Little Rock, Nanotechnology center, Little Rock, Arkansas, United States
Lixi Yuan
Affiliation:
lxyuan@ualr.edu, University of Arkansas at Little Rock, Department of Physics and Astronomy, Little Rock, Arkansas, United States
Dever Norman
Affiliation:
dpnorman@ualr.edu, University of Arkansas at Little Rock, Applied Scence, Little Rock, Arkansas, United States
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Abstract

We have fabricated highly resistive materials PrBa2 (Cu1-xMx) 3O7 (M=Al, Ga, x = 0.20) by doping metals Ga and Al on PrBa2Cu3O7(PBCO). X-ray data indicated no significant second phases in substituting Cu by Al or Ga up to 20%.The electrical resistivity of these materials were three to four orders in magnitude higher than PBCO at 200K, which may give an effective potential barrier to YBCO in high Tc S-I-S Josephson junction. Epitaxial thin films of these materials were grown using KrF excimer laser on LAO (110) single crystal substrates. X-ray diffraction (XRD) and atomic force microscopy (AFM) were deployed to study the crystal orientation, epitaxy and roughness of the single crystal thin films. Micro Raman spectroscopy was carried out to investigate the dopant site in PBCO.

Keywords

filmdopantlaser ablation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1222: Symposium DD – Microelectromechanical Systems — Materials and Devices III , 2009 , 1222-DD02-09
Copyright
Copyright © Materials Research Society 2010

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