Hostname: page-component-857557d7f7-nfgnx Total loading time: 0.001 Render date: 2025-12-09T11:25:59.047Z Has data issue: false hasContentIssue false
  • English
  • Français

Fast-Pulse Excimer-Laser-Induced Processes in a-Si:H

Published online by Cambridge University Press:  21 February 2011

K. Winer ,
R.Z. Bachrach ,
R.I. Johnson ,
S.E. Ready ,
G.B. Anderson  and
J.B. Boyce
K. Winer
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R.Z. Bachrach
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
R.I. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
S.E. Ready
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
G.B. Anderson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
J.B. Boyce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
Get access

Abstract

The effects of fast-pulse excimer laser annealing of a-Si:H were investigated by measurements of electronic transport properties and impurity concentration depth profiles as a function of incident laser energy density. The dc dark conductivity of laser-annealed, highly-doped a-Si:H increases by a factor of ∼350 above a sharp laser energy density threshold whose magnitude increases with decreasing impurity concentration and which correlates with the onset of hydrogen evolution from and crystallization of the near-surface layer. The similarities between the preparation and properties of laser-crystallized a-Si:H and pc-Si:H are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 183
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Sameshima, T. and Usui, S., Mat. Res. Soc. Symp. Proc. 71 (1986) 435.Google Scholar
[2] Fang, P.H., Solar Cells 25 (1988) 27.Google Scholar
[3] Ready, S.E., Boyce, J.B., Bachrach, R.Z., Johnson, R.I., Winer, K., Anderson, G., and Tsai, C.C., Mat. Res. Soc. Symp. Proc. 149 (1989) 345.Google Scholar
[4] Bachrach, R.Z., Winer, K., Boyce, J.B., Ready, S.E., Johnson, R.I., and Anderson, G.B., J. Electronic Materials (to be published).Google Scholar
[5] Nayaran, J., White, C.W., Aziz, M.J., Stritzker, B., and Walthuis, A., J. Appl. Phys. 57 (1985) 564.Google Scholar
[6] Sze, S.M., Physics of Semiconductor Devices (Wiley, New York, 1981).Google Scholar
[7] Winer, K. and Jackson, W.B., Phys. Rev. B40 (1989) 12558.Google Scholar