Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-24T15:25:54.493Z Has data issue: false hasContentIssue false
  • English
  • Français

Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application

Published online by Cambridge University Press:  10 February 2011

Tingkai Li ,
Fengyan Zhang  and
Sheng Teng Hsu
Tingkai Li
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Blvd., Camas, WA
Fengyan Zhang
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Blvd., Camas, WA
Sheng Teng Hsu
Affiliation:
Sharp Microelectronics Technology, Inc., 5700 NW Pacific Rim Blvd., Camas, WA
Get access

Abstract

One transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 579
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ramtron Corporation (Colorado Springs, CO) started introducing its 4Kbit, 8Kbit, and 16Kbit FRAMs in 1988.Google Scholar
2. Takayama, R., Tomita, Y., Iijima, K., and Ueda, I., J. Appl. Phys. 61, 411 (1987).Google Scholar
3. Desu, S.B. and Li, T.K., Mat. Sci. and Eng. B 34, L4–L8 (1995).Google Scholar
4. Araujo, C.A. Paz de, Cuchiaro, J. D., McMillan, L.D., Scott, M.C. & Scott, J.F., Nature, 374, 13, 627–629 (1995).Google Scholar
5. Li, T.K., Zhu, Y.F., Desu, S.B., Peng, C.H., and Masaya, N., Appl. Phys. Letters 68 (5), 616 (1997).Google Scholar
6. Li, T.K., Zhu, Y.F., Desu, S.B., Peng, C.H., Mat. Res. Soc. Symp.Proc. vol.415, 189 (1996).Google Scholar
7. Wu, S.Y., IEEE Trans. Electron Devices, vol. ED–21, 499 (1974).Google Scholar
8. Rost, T.A., Lin, H., and Rabson, T.A., Appl. Phys. Lett., vol. 59 (27), 3654 (1991)Google Scholar
9. Lampe, D.R., Adams, D.A., Austin, M., Polinsky, M., Dzimianski, J., Sinharoy, S., Buhay, H., Brabant, P., and Liu, Y.M., Ferroelectrics, vol. 133, 61 (1992).Google Scholar