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Ferroelectric Properties of La-doped Bi4Ti3O12 Thin Films deposited directly on Si by pulse-injection MOCVD

Published online by Cambridge University Press:  21 March 2011

Joon Hyeong Kim ,
Jin Young Kim  and
Hyeong Joon Kim
Joon Hyeong Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Jin Young Kim
Affiliation:
Inter-University Semiconductor Research Center, Seoul National Univ., Seoul 151-742, Korea
Hyeong Joon Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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Abstract

(Bi,La)4Ti3O12(BLT) thin films were prepared on Si(100) substrates by the pulse injection metalorganic chemical vapor deposition (MOCVD) process, in which Ti and La precursors were injected with periodic pauses while Bi precursor was supplied continuously. In case of the pulse injection method, the film composition was relatively uniform and the Bi content at the interface was relatively uniform and the Bi content at the interface was increased. The BLT films, which were deposited by the pulse injection MOCVD, showed better crystallinity and thinner ionterfacial amorphous layer than the continuous BLT films. The continuous BLT films, although measured at 1 MHz showed similar C-V characteristics to those measured at low frequency region, and their flatband voltages also shifted severely to the negative voltage direction. On the other hand, the pulse BLT films exhibited clockwise ferroelectric hysteresis in the C-V curves. The memory window and the leakage current density were about 2V and 1.46×10−7 A/cm2 at 9V (180 kV/cm), respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC3.7.1
Copyright
Copyright © Materials Research Society 2001

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