Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-02-05T18:54:24.144Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation and High Frequency CV-Measurements of Aluminum / Aluminum Nitride / 6H Silicon Carbide Structures

Published online by Cambridge University Press:  15 February 2011

C. -M. Zetterling ,
K. Wongchotigul ,
M. G. Spencer ,
C. I. Harris ,
S. S. Wong  and
M. Östling
C. -M. Zetterling
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, Kista, Sweden Center for Integrated Systems, Stanford University, Stanford, CA 94305
K. Wongchotigul
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC 20059
M. G. Spencer
Affiliation:
Materials Science Research Center of Excellence, Howard University, Washington, DC 20059
C. I. Harris
Affiliation:
IMC, Industrial Microelectronics Center, Kista, Sweden
S. S. Wong
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
M. Östling
Affiliation:
KTH, Royal Institute of Technology, Dept. of Electronics, Kista, Sweden
Get access

Abstract

Undoped single crystalline aluminum nitride films were grown by metal organic chemical vapor deposition (MOCVD) at 1200 °C. The precursors used were trimethylaluminium (TMA) and ammonia (NH3) in a hydrogen carrier flow, at a pressure of 10 Torr. Silicon carbide substrates of the 4H or the 6H polytype with an epilayer on the silicon face, were used to grow the 200 nm thick A1N films. Aluminum was evaporated and subsequently patterned to form MIS capacitors for high frequency (400 kHz) capacitance voltage measurements at room temperature. It was possible to measure the structure and characterize accumulation, depletion and deep depletion. However, it was not possible to invert the low doped SiC epilayer at room temperature. From an independent optical thickness measurement the relative dielectric constant of aluminum nitride was calculated to be 8.4. The films were stressed up to 50 Volts (2.5 MV/cm) without breakdown or excessive leakage currents. These results indicate the possibility to replace silicon dioxide with aluminum nitride in SiC field effect transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 667
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bhatnagar, M., Alok, D. and Baliga, B. J., “5th International Conference on Silicon Carbide and Related Materials,” Washington D.C., Inst. Phys. Conf. Ser., Vol.137, p. 703, 1993.Google Scholar
2. Davis, R. F., Kelner, G., Shur, M., Palmour, J. W. and Edmond, J. A., Proc. IEEE, 79, p. 677, 1991.Google Scholar
3. Ivanov, P. A. and Chelnokov, V. E., Semicond. Sci. Technol., 7, p. 863, 1992.Google Scholar
4. Alok, D., McLarty, P. K. and Baliga, B. J., Appl. Phys. Lett., 65, p. 2177, 1994.Google Scholar
5. Zetterling, C.-M. and Östling, M., “Diamond, SiC and nitride wide-bandgap semiconductors,” San Francisco, Materials Research Society Proceedings, Vol.339, p. 209, 1994.Google Scholar
6. Wongchotigul, K., Chen, N., Zhang, D. P., Tang, X. and Spencer, M. G., To be published in the proceedings of ICSCRM 95, Kyoto, Japan, 1995.Google Scholar
7. Shenoy, J. N., Chindalore, G. L., Melloch, M. R., Cooper, J. A., Palmour, J. W. and Irvine, K. G., J. Elec. Mater., 24, p. 303, 1995.Google Scholar