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Formation of Carbon Nanotube by using RF plasma CVD equipment from Acetylene and Hydrogen gases

Published online by Cambridge University Press:  15 March 2011

Y. Show ,
T. Matsukawa ,
M. Iwase  and
T. Izumi
Y. Show
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292, JAPAN
T. Matsukawa
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292, JAPAN
M. Iwase
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292, JAPAN
T. Izumi
Affiliation:
Department of Electronics, Faculty of Engineering, Tokai University, 1117 Kitakaname, Hiratsuka-shi, Kanagawa 259-1292, JAPAN
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Abstract

The carbon nanotubes were grown on the round Ni particles at the growth temperature below 60 °C by the radio frequency plasma CVD equipment from the acetylene and the hydrogen gases. For the low growth of the carbon nanotubes, the acetylene concentration in the hydrogen gas was essential parameter. In the case of the high acetylene concentration above 30 %, the cauliflower-like carbon film was grown. On the other hand, the low acetylene concentration of 10 % realized the low temperature growth of the carbon nanotubes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 633: Symposium A – Nanotubes and Related Materials , 2000 , A13.12
Copyright
Copyright © Materials Research Society 2001

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References

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