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Formation of Mn Oxide with Thermal CVD and its Diffusion Barrier Property Between Cu and SiO2

Published online by Cambridge University Press:  01 February 2011

Koji Neishi ,
Shiro Aki ,
Jun Iijima  and
Junichi Koike
Koji Neishi
Affiliation:
neishi@material.tohoku.ac.jp, Tohoku University, Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan, +81-22-795-7339, +81-22-795-7338
Shiro Aki
Affiliation:
a4tb4001@stu.material.tohoku.ac.jp, Tohoku University, Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
Jun Iijima
Affiliation:
iijimajj@material.tohoku.ac.jp, Tohoku University, Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
Junichi Koike
Affiliation:
koikej@material.tohoku.ac.jp, Tohoku University, Materials Science, 6-6-11 Aoba, Aramaki, Aoba-ku, Sendai, 980-8579, Japan
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Abstract

A manganese oxide layer was formed by thermal chemical vapor deposition(CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. The thickness of the Mn oxide layer could be varied 2.6 to 10 nm depending on deposition temperature. Heat-treated samples of PVD Cu / CVD Mn oxide /SiO2 indicated no interdiffusion. The CVD Mn oxide was found to be a good diffusion barrier layer.

Keywords

barrier layerchemical vapor deposition (CVD) (deposition)diffusion
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N03-11
Copyright
Copyright © Materials Research Society 2008

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References

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