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The Formation of Thin Layers and Double Heterostructures of Epitaxial Silicides

Published online by Cambridge University Press:  25 February 2011

R. T. Tung  and
J. M. Gibson
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
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Abstract

This paper reviews the “template” growth technique in UHV and the novel structures and properties of single crystal silicide thin films and double heterostructures.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 211
Copyright
Copyright © Materials Research Society 1986

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References

1. Tung, R. T., Poate, J. M., Bean, J. C., Gibson, J. M. and Jacobson, D. C., Thin Solid Films 93, 77(1982).Google Scholar
2. Ishiwara, H., Electrochem. Soc. Symp. Proc.80–2, 159(1980)Google Scholar
3. Tung, R. T., Gibson, J. M. and Poate, J. M., Appl. Phys. Lett. 42, 888 (1983).Google Scholar
4. Tung, R. T., Gibson, J. M. and Poate, J. M., Phys. Rev. Lett. 50, 429 (1983).Google Scholar
5. Ishiwara, H., Asana, T. and Furukawa, S., J. Vac. Sci. Technol. B 1, 266 (1983).CrossRefGoogle Scholar
6. Fathauer, R. W., Schowalter, L. J., Lewis, N. and Hall, E. L., Electrochem. Soc. Symp. Proc. 85–7, 277 (1985).Google Scholar
7. Tung, R. T., Levi, A. F. J. and Gibson, J. M., Appl. Phys. Lett. 48, 635 (1986).Google Scholar
8. Akiyama, M., Kawarada, K., Nishi, S. and Kaminishi, K., this volume.Google Scholar
9. Comin, F., Rowe, J. E. and Citrin, P. H., Phys. Rev. Lett. 51, 2402 (1983).CrossRefGoogle Scholar
10. van Loenen, E. J., Frenken, J. W. M. and Van der Veen, J. F., Appl. Phys. Lett. 45, 41 (1984).Google Scholar
11. Grunthaner, P. J., Grunthaner, F. J. and Mayer, J. W., J. Vac. Sci. Technol. 17, 924 (1980).CrossRefGoogle Scholar
12. Tung, R. T., Gibson, J. M. and Poate, J. M., Mat. Res. Soc. Symp. Proc. 14, 435 (1983).CrossRefGoogle Scholar
13. Gibson, J. M., Tung, R. T. and Poate, J. M., Mat. Res. Soc. Symp. Proc. 14, 395 (1983).Google Scholar
14. Tung, R. T., to be published.Google Scholar
15. Cheung, N.W. and Mayer, J.W., Phys. Rev. Lett. 46, 671 (1981).CrossRefGoogle Scholar
16. Comin, F., J. Vac. Sci. Tech. A 3, 930 (1985).CrossRefGoogle Scholar
17. Chiu, K. C. R., Poate, J. M., Rowe, J. E., Sheng, T. T. and Cullis, A. G., Appl. Phys. Lett. 38, 988 (1981).Google Scholar
18. Tung, R.T., Nakahara, S. and Boone, T., Appl. Phys. Lett. 46, 895 (1985).CrossRefGoogle Scholar
19. Hensel, J. C., Tung, R. T., Poate, J. M. and Unterwald, F. C., Appl. Phys. Lett. 44, 913 (1984).CrossRefGoogle Scholar
20. Pirri, C., Peruchetti, J. C., Bolmont, D. and Gewinner, G., Phys. Rev. B 33, 4108 (1986).Google Scholar
21. Crowell, C. R. and Sze, S. M., Phys. Rev. Lett. 15, 659 (1965).Google Scholar
22. Ishizaka, A. and Shiraki, Y., Jpn. J. Appl. Phys. 23, L499 (1984).Google Scholar
23. Tung, R. T., Gibson, J. M. and Levi, A. F. J., Appl. Phys. Lett. May 12, 1986.Google Scholar
24. Hensel, J. C., Levi, A. F. J., Tung, R. T. and Gibson, J. M., Appl. Phys. Lett. 47, 151 (1985).CrossRefGoogle Scholar
25. Rosencher, E., Delage, S., Campidelli, Y. and D'Avitaya, F. Arnaud, Electron. Lett. 20, 762 (1984).Google Scholar
26. Rosencher, E., Delage, S., D'Avitaya, F. Arnaud, D'Anterroches, C., Belhaddad, K. and Pfister, J. C., Physica 134 B, 106 (1985).Google Scholar
27. Spence, J. C. H., Experimental High Resolution Electron Microscopy, Clarendon, Oxford, 1980.Google Scholar
28. Cherns, D., Anstis, G. R., Hutchinson, J. L. and Spence, J. C. H., Philos. Mag. A 46, 849 (1982).Google Scholar
29. Gibson, J. M., to be published.Google Scholar
30. Akimoto, K., Ishikawa, T., Takahashi, T. and Kikuta, S., Jpn. J. Appl. Phys. 22, L798 (1983).CrossRefGoogle Scholar
31. Gibson, J. M., Tung, R. T., Pimentel, C. A. and Joy, D. C., Inst. Phys. Conf. Ser. 76, 173 (1985).Google Scholar
32. Cherns, D., Hetherington, C. J. D. and Humphreys, C. J., Philos. Mag. A 49, 165 (1984).CrossRefGoogle Scholar
33. Gibson, J. M., Ultramicroscopy 14, 1 (1984).Google Scholar
34. van Loenen, E. J., Frenken, J. W. M., van der Veen, J. F. and Valeri, S., Phys. Rev. Lett. 54, 827 (1985).Google Scholar
35. Hamann, D. R. and Mattheiss, L. F., Phys. Rev. Lett. 54, 2517 (1985).Google Scholar
36. Bisi, O., Chiao, L. W. and Tu, K. N., Phys. Rev. B 30, 4664 (1984).CrossRefGoogle Scholar
37. Tung, R. T., Phys. Rev. Lett. 52, 461 (1984).CrossRefGoogle Scholar
38. Tung, R. T., J. Vac. Sci. Technol. B 2, 465 (1984).Google Scholar
39. Liehr, M., Schmidt, P. E., LeGoues, F. K. and Ho, P. S., Phys. Rev. Lett. 54, 2139 (1985).Google Scholar
40. Hauenstein, R. J., Schlesinger, T. E., McGill, T. C., Hunt, B. D. and Schowalter, L. J., Appl. Phys. Lett. 47, 853 (1985).Google Scholar
41. Tung, R. T., Ng, K. K., Gibson, J. M. and Levi, A. F. J., Phys. Rev. B, May 15, 1986.Google Scholar
42. Tung, R. T. and Gibson, J. M., J. Vac. Sci. Technol. A 3, 987 (1985).CrossRefGoogle Scholar
43. Levi, A. F. J., Tung, R. T., Batstone, J. and Gibson, J. M., to be published.Google Scholar
44. Kao, Y. C., Wu, Y. Y. and Wang, K. L., Electrochem. Soc. Syrmp. Proc. 85–7, 261 (1985).Google Scholar
45. Rosencher, E., Delage, S. andD'Avitaya, F. Arnaud, J. Vac. Sci. Technol. B 3, 762 (1985).CrossRefGoogle Scholar