Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-18T18:36:33.215Z Has data issue: false hasContentIssue false
  • English
  • Français

Furnace and Rapid Thermal Annealing of P–Implanted Silicon for Solar Cell Fabrication

Published online by Cambridge University Press:  25 February 2011

H.B. Harrison ,
Y.H. Lee ,
A. Pogany  and
M.J. Kenny
H.B. Harrison
Affiliation:
Microelectronics Centre, RMIT, Melbourne, Victoria, Australia
Y.H. Lee
Affiliation:
Microelectronics Centre, RMIT, Melbourne, Victoria, Australia
A. Pogany
Affiliation:
Microelectronics Centre, RMIT, Melbourne, Victoria, Australia
M.J. Kenny
Affiliation:
CSIRO, Division of Chemical Physics, Lucas Heights, NSW, Australia
Get access

Abstract

Single crystal silicon has been implanted with low energy (20 keV) phosphorus ions and a comparison made of furnace annealing (which produces excellent solar cells) and rapid annealing using a radiant incoherent light source. The light source is used to anneal and activate implanted layers in the isothermal mode on a time scale of the order of seconds compared with the much longer furnace annealing times of several hours.

Initial results using the incoherent light source show a high dark current and inferior photoresponse. However a subsequent thermal treatment at 600°C for 10–15 minutes shows that the resultant photoresponse can approach that of the longer time furnace anneal. Transmission electron microscopy shows the formation of large voids (20–100 nm) after the initial annealing phase. These reduce in size after furnace annealing. This photoresponse may be related to this void formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 343
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kimerling, L.C. and Benton, J.L. in “Laser and Electron Beam Annealing of Materials”. White, C.W. and Peercy, P.S., Editors, p.385. Proc. 1979 Materials Research Society Conf. Academic Press N.Y. (1980).Google Scholar
2. Stein, H.J., Knapp, J.A. and Peercy, P.S. in “Laser and Electron Beam Interactions with Solids”, Vol. 4, Appleton, B.R. and Celler, G.R., Editors, p.319, Elsevier, North Holland (N.Y.) (1982).Google Scholar
3.Ibid p.343, Johnson, N.M. Google Scholar
4. Gibbons, J.F., Hess, L.D. and Sigmon, T.W., Eds. “Laser and Electron-Beam Solid Interactions and Material Processing” North Holland N.Y. 1981.Google Scholar
5. Fuchs, R.J., Russo, C.J., Harley, P.R. and Kamins, J.I., Appl. Phys. Lett. 39, 604 (1981).Google Scholar
6. Lue, J.L., Appl. Phys. Lett., 36, 73 (1980).CrossRefGoogle Scholar
7. Harrison, H.B., Grigg, M., Short, K.J., Williams, J.S. and Zylewicz, A. in “Laser and Electron Beam Interactions and Solids”, Vol. 4, Appleton, B.R. and Celler, G.R., Edtiors, p.771, Elsevier, North Holland (N.Y.) (1982).Google Scholar
8. Harrison, H.B., Johnson, S.J., Cornish, B., Adams, F.M., Short, K.J. and Williams, J.S. in “Laser Solid Interactions and Transient Thermal Processing of Materials” Narayan, J., Brown, W.L. and Lemons, R.A., Editors, p. 393, Elsevier, North Holland (N.Y.) (1983).Google Scholar
9. Nishiyama, R., Arai, M. and Watanabe, N., Japan, J. Appl. Phys. 19, L563 (1980).CrossRefGoogle Scholar
10. Spitzer, M.B., Tobin, S.P. and Keavney, C.J., IEEE Trans. on Electron Dev, Vol. ED31, 5 (1984).Google Scholar