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Gallium Nitride Doped with Zinc and Oxygen - The Crystal for the Blue Polarized Light-Emitting Diodes

Published online by Cambridge University Press:  10 February 2011

V. G. Sidorov ,
A. G. Drezhuk ,
M. V. Zaitsev  and
D. V. Sidorov
V. G. Sidorov
Affiliation:
St. Petersburg State Technical University, 29 Politechnicheskaya Str., St. Petersburg, 195251, Russia, rykov@phsc3.stu.neva.ru
A. G. Drezhuk
Affiliation:
Politechnical Institute, Vologda, Russia
M. V. Zaitsev
Affiliation:
Politechnical Institute, Vologda, Russia
D. V. Sidorov
Affiliation:
A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
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Abstract

Epitaxial layers and light-emitting i-n-structures with the active region of GaN doped simultaneously with zinc and oxygen have been grown. Effective up to 60% blue polarized luminescence has been observed. Investigated properties of grown layers and structures are presented. A discussion of issues related to GaN utilization based on its found properties is also included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 137
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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