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Gas Source Si-Mbe

Published online by Cambridge University Press:  28 February 2011

Hiroyuki Hirayama ,
Masayuki Hiroi ,
Kazuhisa Koyama  and
Toru Tatsumi
Hiroyuki Hirayama
Affiliation:
Microelectronics Research Laboratories, NEC Corporation Miyazaki 4-1-1, Miyamae-ku, kawasaki 213, Japan
Masayuki Hiroi
Affiliation:
Microelectronics Research Laboratories, NEC Corporation Miyazaki 4-1-1, Miyamae-ku, kawasaki 213, Japan
Kazuhisa Koyama
Affiliation:
Microelectronics Research Laboratories, NEC Corporation Miyazaki 4-1-1, Miyamae-ku, kawasaki 213, Japan
Toru Tatsumi
Affiliation:
Microelectronics Research Laboratories, NEC Corporation Miyazaki 4-1-1, Miyamae-ku, kawasaki 213, Japan
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Abstract

Gas source Si molecular beam epitaxy (Si-MBE) apparatus has been devised. The growth mechanism was studied using reflection high energy electron diffraction (RHEED) intensity oscillation. Si epitaxial layers grew through a dissociative adsorption of Si2H6 molecules on Si surfaces. This dissociative adsorption enables a selective epitaxial growth on SiO2 patterned Si wafers. At low temperatures, the growth rate was limited by a desorption of hydrogen which terminates surface dangling bonds. Doping with B, Sb and P were also studied. B doping was achieved using HBO2 Knudsen cell or B2H6 gas dopant. Sb doping used an ionized doping cell. P doping was achieved using PH3 gas dopant. The effect of B doping on the growth was studied using RHEED oscillation. A doped layer's selective epiataxial growth was possible by selective epitaxial growth under doping. This technique was applied to bipolar transistor fabrication. Moreover, using GeH4, Si1−xGex compound growth and its selective epitaxial growth was achieved. Using this Si1−xGex selectively grown layer, a Si1−xGex base heterobipolar transistor (HBT) was also fabricated. An electron cyclotron resonance (ECR) gas source Si-MBE cell was used for a low temperature surface cleaning and a surface termination by atomic hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 539
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1]Bean, J. C.; J.Cryst.Growth 81,411(1987)Google Scholar
[2]Ohta, Y.; Thin Solid Films 106, 3(1983)Google Scholar
[3]Tatsumi, T.,Hirayama, H. and Aizaki, N.; Appl. Phys. Lett., 50, 1234(1987)Google Scholar
[4]Zeindl, H.P.,Wegehaupt, T. and Eisele, I.; Thin Solid Films 184, 21(1990)Google Scholar
[5)Tatsumi, T.,Hirayama, H. and Aizaki, N.; Appl. Phys. Lett., 54, 629(1989)Google Scholar
[6)Hirayama, H.,Tatsumi, T.,Ogura, A. and Aizaki, N.; Appl. Phys. Lett., 51, 2213 (1987)Google Scholar
[7]Imbihl, R., Demuth, J.E.,Gates, S.M. and Scott, B.A.; Phys. Rev. B39, 5222(1989)Google Scholar
[8]Bozso, F. and Avouris, Ph.; Phys. Rev. B38, 3943(1988)Google Scholar
[9]Suda, Y., Lubben, D., Motooka, T. and Green, J.E.; J. Vac. Sci. Technol., A8, 61(1990)Google Scholar
[10)Suda, Y., Lubben, D., Motooka, T. and Green, J.E.; J. Vac. Sci. Technol., B7, 1171(1989)Google Scholar
[11)Gates, S.M.; Surf. Sci., 195, 3079(1988)Google Scholar
[12]Hiroi, M., Koyama, K., Tatsumi, T. and Hirayama, H.; to be published in Appl.Phys.Lett.,Google Scholar
[13]Sakamoto, T., Funabashi, H.,Ohta, K., Nakagawa, T., Kawai, N. J. and Kojima, T.; Jpn.J.Appl.Phys., 23, L657(1984)Google Scholar
[14]Sinniah, K., Sherman, M.G., Lewis, L.B.,Weinberg, W.H. Yates, J.T. Jr., and Janda, K.C.; Phys. Rev. Lett., 62, 567 (1989)Google Scholar
[15]Hirayama, H. Tatsumi, T. and Aizaki, N.; Appl. Phys. Lett., 52, 1484(1988)Google Scholar
[16]Hirayama, H.,Tatsumi, T. and Aizaki, N.; J.Cryst.Growth 95,476(1989)Google Scholar
[17)Metzger, R.A. and Allen, F.G.; J.Appl.Phys., 55,931(1984)Google Scholar
[18)Hirayama, H. and Tatsumi, T.; Appl. Phys. Lett., 55, 131 (1989)Google Scholar
[19)Hirayama, H. and Tatsumi, T.; Thin Solid Films 184,125(1990)Google Scholar
[20)Hirayama, H. and Tatsumi, T.; Appl. Phys. Lett., 54, 1561(1989)Google Scholar
[21]Tatsumi, T.,Aizaki, N. and Tsuya, H.; Jpn. J. Appl. Phys., 24, L227 (1985)Google Scholar
[22]Hirayama, H.,Tatsumi, T. and Aizaki, N.; J. Appl. Phys., 66,629(1989)Google Scholar
[23]Hirayama, H.,Koyama, K. and Tatsumi, T.; IEEE Electron Devices EDL–11, 18(1990)Google Scholar
[24]Hirayama, H.,Hiroi, M.,Koyama, K. and Tatsumi, T.; Appl.Phys.Lett., 56,1107(1990)Google Scholar
[25] Bean, J.C., Feldman, L.C.,Fiory, A.,Nakahara, S. and Robinson, I.K.; J. Vac. Sci. Technol., A2, 436(1984)Google Scholar