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Generation and Dissociation of Iron-Boron Pairs in Silicon

Published online by Cambridge University Press:  25 February 2011

Masashi Suezawa  and
Koji Sumino
Masashi Suezawa
Affiliation:
Institute for Materials Research. Tohoku University, Sendai 980, Japan
Koji Sumino
Affiliation:
Institute for Materials Research. Tohoku University, Sendai 980, Japan
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Abstract

The generation and dissociation processes of Fe-B pairs in Si crystal are investigated by means of the measurements of electron paramagnetic resonance of Si crystals of various B concentrations doped with Fe. Fe-B pairs are generated due to annealing of the crystals at temperatures around 300 K obeying to the first order reaction kinetics. The activation energy for pair generation is determined to be about 0.65 eV which is almost equal to the migration energy of Fe impurity in a Si crystal. Fe-B pairs are found to be dissociated at tempeatures higher than 150°C leading to the precipitation of Fe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 233
Copyright
Copyright © Materials Research Society 1990

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