Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T20:50:39.692Z Has data issue: false hasContentIssue false
  • English
  • Français

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

Published online by Cambridge University Press:  26 February 2011

D. Y. C. Lie ,
A. Vantomme ,
F. Eisen ,
M. -A. Nicolet ,
V. Arbet-Engels  and
K.L. Wang
D. Y. C. Lie
Affiliation:
Dept. of Electr. Eng., California Institute of Technology, Pasadena, CA 91125
A. Vantomme
Affiliation:
Dept. of Electr. Eng., California Institute of Technology, Pasadena, CA 91125
F. Eisen
Affiliation:
Dept. of Electr. Eng., California Institute of Technology, Pasadena, CA 91125
M. -A. Nicolet
Affiliation:
Dept. of Electr. Eng., California Institute of Technology, Pasadena, CA 91125
V. Arbet-Engels
Affiliation:
University of California, Los Angeles, CA 90024
K.L. Wang
Affiliation:
University of California, Los Angeles, CA 90024
Get access

Abstract

We have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1079
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Williams, J. S., Elliman, R. G., Brown, W. L. and Wesch, W., Phys. Rev. Lett. 55, 1482 (1985).CrossRefGoogle Scholar
[2] White, A. E., Short, K. T., Dynes, R. C., Gamo, J. P. and Gibson, J. M., Appl. Phys. Lett. 50, 95 (1987).Google Scholar
[3] Packan, P. A. and Plummer, J. D., Appl. Phys. Lett. 56, 1787 (1990).Google Scholar
[4] Jain, S. C. and Hayes, W., Semicond. Sci. Technol. 6, 547 (1991).Google Scholar
[5] Bai, G. and Nicolet, M -A., J. Appl. Phys. 70, 649 (1991).Google Scholar
[6] Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974).Google Scholar
[7] Wie, C. R., Tombrello, T. A. and Vreeland, T. Jr, J. Appl. Phys. 59, 3743 (1986).CrossRefGoogle Scholar
[8] Tewordt, L., Phys. Rev. 109, 61 (1958).CrossRefGoogle Scholar
[9] Feldman, L. C., Mayer, J. W. and Picraux, S. T., “Materials Analysis by Ion Channeling” (Academic Press, 1982).Google Scholar
[10] Ziegler, J. F., Biersack, J. P. and Littmark, U., “The Stopping and Range of ions in Matter” (Pergamon Press, 1985).CrossRefGoogle Scholar
[11] Sjoreen, T. P., Holland, O. W., El-Ghor, M. K. and White, C. W., MRS Symp. Proc. 28, 593 (1989).Google Scholar
[12] Bai, G., PhD Thesis, California Inst, of Technology (1991), unpublished.Google Scholar
[13] “Handbook of Semiconductor Silicon Technology”, edited by O'Mara, W. C., Herring, R. B. and Hunt, L. P. (Noyes Publications, 1990).Google Scholar
[14] Tsai, C. J., Dommann, A., Nicolet, M. -A. and Vreeland, T. Jr, J. Appl. Phys. 69, 2076 (1991).Google Scholar
[15] Lie, D. Y. C., Vantomme, A., Eisen, F. and Nicolet, M -A., unpublished.Google Scholar
[16] Holland, O. W., El-Ghor, M. K. and White, C. W., Appl. Phys. Lett. 53, 1282 (1988).Google Scholar
[17] Kittel, C., “Introduction to Solid State Physics”, 5th edition (John Wiley and Sons Inc., 1976).Google Scholar
[18] Morehead, F. F. Jr, and Crowder, B. L., Proc. 1st Inter. Conf. on Ion Implantation, ed. Chadderton, L. and Eisen, F. (Gordon and Breach, New York, 1971) p. 25.Google Scholar
[19] Gibbons, J. F., Proc. IEEE 60, 1062 (1972).Google Scholar