Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-28T14:46:16.205Z Has data issue: false hasContentIssue false

The Growth and Characterization of Zinc Oxide Thin Film on Fused Silica and SiO2/Si(100) Substrates

Published online by Cambridge University Press:  11 February 2011

C. Jin
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7916
A. Tiwari
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7916
H. Porter
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7916
M. Park
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695–7916
Get access

Abstratct

In this work, ZnO thin films were grown on amorphous fused silica and pre-oxidized silicon substrates by using pulsed laser deposition technique. X-ray diffraction patterns showed that the films were highly crystalline and c-axis oriented. The surface morphologies of the films were observed by using scanning electron microscope and optical microscope. Free exciton absorption was observed at room temperature for the film grown on fused silica substrate. The strong near-UV luminescence peaked at 380 nm were observed for all the films and was attributed to the phonon-related exciton emission. The effect of oxygen partial pressure on the luminescence intensity is also reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, S. and Fasol, G., The Blue Laser Diode (Springer, Berlin, 1997).Google Scholar
2. Wiersma, D., Natrure (London) 406, 132 (2000).Google Scholar
3. Vanheusden, K., Warren, W.L., Seager, C.H., Tallant, D.R., Voight, J.A., and Gnade, B.E., J. Appl. Phys. 79, 7983 (1996).Google Scholar
4. Chopra, K.L. and Das, S.R., Thin Film Solar Cell (Plenum, New York, 1983).Google Scholar
5. Weissenrieder, S. and Muller, J. and, Thin Solid Films, 300, 30 (1997).Google Scholar
6. Shih, W.C. and Wu, M.S., J. Cryst. Growth, 137, 319 (1994).Google Scholar
7. Natsume, Y., Sakata, H., Hirayama, T., J. Appl. Phys. 72, 4203 (1992).Google Scholar
8. Narayan, J., Dovidenko, K., Sharma, A. K., and Oktyabrsky, S., J. Appl. Phys. 84, 2597 (1998)Google Scholar
9. Stolt, L., Hedstrom, J., Ruckh, M., Velthaus, K.V., and Schcok, H. W., Appl. Phys. Letter, 62, 597, (1993).Google Scholar
10. Studenikin, S.A., Golego, N., and Cocivera, M., J. Appl. Phys. 63, 2104 (1998).Google Scholar
11. Ohtomo, A., Tamura, K., Saikusa, K., Takahashi, K., Makino, T., Segawa, Y., Koinuma, H., and Kawasaki, M., Appl. Phys. Lett. 17, 2635 (1999).Google Scholar
12. Ning, Z.Y., Cheng, S.H., Ge, S.B., Chao, Y., Gang, Z.Q., Zhang, Y.X., and Liu, Z.G., Thin Solid Films, 307, 50 (1993).Google Scholar
13. Liang, W.Y. and Yoffe, A.D., Physical Review Letters, 20, 59 (1968).Google Scholar
14. Damen, T.C., Porto, S.P.S., and Tell, B., Physical Review, 142, 570 (1966).Google Scholar