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Growth of Amorphous, Microcrystalline, and Epitaxial Silicon in Low Temperature Plasma Deposition

Published online by Cambridge University Press:  25 February 2011

C. C. Tsai ,
G.B. Anderson  and
R. Anderson
C. C. Tsai
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
G.B. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

This paper examines near-equilibrium and non-equilibrium film formation processes in the plasma deposition of Si and their effects on network propagation, defect generation and interface quality based on the concept of film formation as a balance between deposition and ‘etching.’ Using non-F reactant gases and conventional PECVD, epitaxial Si growth was achieved at 250°C. By adjusting the extent of ‘etching’, one can selectively obtain amorphous, microcrystalline, polycrystalline, and epitaxial Si using similar process gases and reactors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 475
Copyright
Copyright © Materials Research Society 1990

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References

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