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Growth of Strain-Free GaAs on Si/Sapphire

Published online by Cambridge University Press:  15 February 2011

Hyunchul Sohn ,
E.R. Weber ,
Jay Tu  and
J.S. Smith
Hyunchul Sohn
Affiliation:
Department of Materials Science and Mineral Engineering, University of California
E.R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California
Jay Tu
Affiliation:
Department of Electric Engineering and Computer Science, University of California, Berkeley.
J.S. Smith
Affiliation:
Department of Electric Engineering and Computer Science, University of California, Berkeley.
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Abstract

GaAs epitaxial layers were successfully grown on Si/Sapphire substrates using Molecular Beam Epitaxy(MBE). Residual compressive strain was found in GaAs films on Si/Sapphire. By Photoluminescence, the magnitude of residual strain in GaAs on Si/Sapphire was estimated to be 5×10-4 which is about one order smaller than that of GaAs on Si.

As an effort to achieve further reduction in the residual strain, Indium- doped GaAs films were used as buffer layers in order to compensate compressive thermal strain by tensile misfit strain in the GaAs layer. Using this method, strain- free GaAs layers could be grown with thickness up to 0.4 μm on Si/Sapphire.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 423
Copyright
Copyright © Materials Research Society 1993

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References

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