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The Growth of Submicron Eutectic Thin Film Structures

Published online by Cambridge University Press:  15 February 2011

Harvey E. Cline*
Affiliation:
General Electric Corporate Research and Development PO Box 8Schenectady, NY 12301
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Abstract

As the minimum dimension of electronic circuits is reduced below one micron, there has been increased interest in developing techniques for fabricating submicron structures. Pb-Sn, Cd-Pb and Al-Al 2Cu eutectic thin films were directionally solidified at rates between .0015 cm/sec and .15 cm/sec with both a lamp and a laser heat source to fabricate fault free submicron periodic structures. A transition from lamellar to cellular structures with increasing solidification rate was observed with a thermal gradient of 200°C/cm applied with the lamp heat source. Cells did not form with the increased thermal gradient produced by the laser heat source, 8000° C/cm. Spacings as fine as .1 micron were observed in the Cd-Pb eutectic. A maximum theoretical growth rate was estimated which corresponds to a spacing of 80A.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

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References

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