Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-20T02:26:37.508Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111)

Published online by Cambridge University Press:  01 February 2011

M. B. Charles ,
M. J. Kappers  and
C. J. Humphreys
M. B. Charles
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
M. J. Kappers
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
C. J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, UK
Get access

Abstract

The strain in Al0.80Ga0.20N/GaN distributed Bragg reflectors (DBRs) grown by metalorganic vapour phase epitaxy (MOVPE) on Si(111) was studied using high resolution X-ray diffraction (XRD). Previous studies have shown that a 50nm Al0.80Ga0.20N layer induced a compressive strain in Al0.12Ga0.88N capping layers and prevented crack formation. A seven period Al0.80Ga0.20N/GaN DBR was grown, but this was found to be cracked at room temperature, despite compression in the GaN layers. This problem was solved by growing an identical structure with the addition of a 650nm GaN cap, and due to the compression in this layer, the structure was crack-free.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.17
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Krost, A., Dadgar, A., Phys. Stat. Sol(a) 194 361 (2002)Google Scholar
2. Natali, F., yrne, D., Dussaigne, A., Garandjean, N., Massies, J. and Damilano, B., Appl. Phys. Lett. 82 499 (2003)Google Scholar
3. Romano, L. T., Van de Walle, C. G., Ager, J. W. III, Götz, W., Kern, R. S., J. Appl. Phys. 87 7745 (2000)Google Scholar
4. McAleese, C., Kappers, M. J., Rayment, F. D. G., Cherns, P., Humphreys, C. J., Proceedings of the 12th International Conference on MOVPE, Lahaina, Hawaii, USA, 30th May - 4th June 2004, J. Cryst. Growt Google Scholar
5. Charles, M. B., Kappers, M. J., Humphreys, C. J., Proceedings of E-MRS Fall Meeting 2004 Warsaw, Phys. Stat. Sol(c) Google Scholar