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Growth of ZnSe-Based Compounds on Ge-Terminated GaAs Surface

Published online by Cambridge University Press:  03 September 2012

T. Saitoh ,
A. Tsujimura ,
T. Nishikawa ,
A. Watakabe  and
Y. Sasai
T. Saitoh
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
A. Tsujimura
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
T. Nishikawa
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
A. Watakabe
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
Y. Sasai
Affiliation:
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Abstract

Growth of ZnSe-based compounds on the GaAs surface terminated by ultra-thin Ge epitaxial layer was carried out by molecular beam epitaxy and the influence of Ge layer on the growth of ZnSe was investigated. When the thickness of Ge layer was 1 atomic layer (AL), 2-dimensional growth occurred in the initial stage of ZnSe layer growth and anti-phase boundary (APB) free ZnSe layer was obtained. For Ge layer thickness of 10 AL, ZnSe grew 3-dimensionally and APBs were generated in the ZnSe layer. The crystalline quality of ZnMgSSe layer was also strongly influenced by the thickness of Ge layer. These phenomena were identified to be due to the transition of Ge surface structure from single domain to double domain with increasing Ge layer thickness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 141
Copyright
Copyright © Materials Research Society 1997

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References

1 Hua, G. C., Otsuka, N., Grillo, D. C., Fan, Y., Han, J., Ringle, M. D., Gunshor, R. L., Hovinen, M. and Nurmikko, V., Appl. Phys. Lett. 65, p 1331 (1994).Google Scholar
2 Tomiya, S., Morita, E., Ukita, M., Okuyama, H., Itoh, S., Nakano, K. and Ishibashi, A., Appl. Phys. Lett. 66, p 1208 (1995).Google Scholar
3 Kuo, L. H., Kimura, K., Yasuda, T., Miwa, S., Jin, C. G., Yanaka, K. and Yao, T., Appl. Phys. Lett. 68, p2413 (1996).Google Scholar
4 Kuo, L. H., Salamanca-Riba, L., Wu, B. J.,Hofler, G., Depuydt, J. M. and Cheng, H., Appl. Phys. Lett. 67, p3298 (1995).Google Scholar
5 Saito, S., Parbrook, P. J., Nakamura, S., Nishikawa, Y. and Hatakoshi, G., Proc. Int. Symp. Blue Laser and Light Emitting Diodes, p66 (Chiba, 1996).Google Scholar
6 Karasawa, T., Ohkawa, K. and Mitsuyu, T., J. Appl. Phys. 69, p3226 (1991).Google Scholar