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Growth of Zr Substituted Barium Titanate Thin Films from the Vapor Phase

Published online by Cambridge University Press:  11 February 2011

R. Ganster ,
S. Hoffmann-Eifert  and
R. Waser
R. Ganster
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
S. Hoffmann-Eifert
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
R. Waser
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
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Abstract

We report on the growth of Ba(Ti1-xZrx)O3 thin films on Pt(111) / TiO2 / SiO2 / Si substrates by means of metal-organic chemical vapor deposition (MOCVD) using liquid precursors. The MOCVD system consists of an AIXTRON AIX-200 horizontal reactor with a TriJet® vaporizer. In the multi-source injection system the different single element precursor solutions were introduced separately in a pulse mode. The focus of our investigations lies on the correlation between processing conditions, growth rate, and film properties, namely stoichiometry, crystal structure, and surface morphology. Dense, polycrystalline Ba(Ti0.63Zr0.37)O3 films were successfully grown on platinum coated silicon substrates at temperatures around 630°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U12.2
Copyright
Copyright © Materials Research Society 2003

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References

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