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Growth Temperature and Oxygen Ambient Dependency of SrTiO3/Si(100) InterfaceStructures

Published online by Cambridge University Press:  17 March 2011

Parhat Ahmet ,
Takashi Koida ,
Mamoru Yoshimoto ,
Hideomi Koinuma  and
Toyohiro Chikyow
Parhat Ahmet
Affiliation:
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
Takashi Koida
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Yokohama, Kanagawa, 226-8503, Japan.
Mamoru Yoshimoto
Affiliation:
Ceramic Materials and Structure Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Yokohama, Kanagawa, 226-8503, Japan.
Hideomi Koinuma
Affiliation:
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuda, Yokohama, Kanagawa, 226-8503, Japan. Ceramic Materials and Structure Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Yokohama, Kanagawa, 226-8503, Japan.
Toyohiro Chikyow
Affiliation:
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
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Abstract

A systematical growth temperature and oxygen ambient dependency of SrTiO3/Si interface structures were investigated using a growth temperature gradient pulse laser deposition (PLD) system and cross sectional high resolution transmission electron microscopy (HRTEM). A SiO2 interfacial layer and an amorphized SrTiO3 layer were observed at the interface for the thin films grown on Si (100) at growth temperatures above 600°C. Our results show that at growth temperatures higher than 600°C, the formation of the amorphized SrTiO3 layer is strongly growth temperature and also oxygen partial pressure dependent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 700: Symposium S – Combinatorial and Artificial Intelligence Methods in Materials Science , 2001 , S3.4
Copyright
Copyright © Materials Research Society 2002

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