Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-29T09:36:02.879Z Has data issue: false hasContentIssue false
  • English
  • Français

Heavily Doped Ultra-Shallow Junctions Formed by an ArF Excimer Laser

Published online by Cambridge University Press:  25 February 2011

S. Yoshioka ,
J. Wada ,
H. Saeki  and
S. Matsumoto
S. Yoshioka
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama, 223, Japan
J. Wada
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama, 223, Japan
H. Saeki
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama, 223, Japan
S. Matsumoto
Affiliation:
Department of Electrical Engineering, Keio University Hiyoshi, Yokohama, 223, Japan
Get access

Abstract

Boron doping of single crystal silicon using an argon fluoride excimer laser with diborane gas has been performed. Diborane gas has an absorption at 193nm, which leads to gas phase photodecomposition of the diborane. Utilizing the photolyic effect, we obtained high surface concentration and ultrashallow junctions of 5×1020 cm−3 and 0.1 µm, respectively. The photolytic effect enhances the incorporation of the dopant species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 597
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rytz-Ftoidevaux, Y., Salathe, R.P., and Gilgen, H.H., Appl. Phs. A37, 121 (1985).Google Scholar
2. Duesch, T.F., Ehrlich, D.J., Rathman, D.D., Silversmith, D.J., and Osgood, R.M. Jr., Appl. Phys. Lett. 39, 825 (1981).Google Scholar
3. Care, P.G., Sigmon, T.W., LPress, R., and Fahlem, T.S., IEEE Electron Device Lett. EDL–6, 291 Google Scholar
4. Carey, P.G., Bezjian, K., Sigmon, T.W., Gildea, P., and Masgee, T.J., IEEE Electron Device Lett.Google Scholar
5. Kato, S., Nagahori, T., and Matsumoto, S., J. Appl. Phys. 62, 3656 (1987).Google Scholar
6. Kato, S., Saeki, H., Wada, J., and Matsumoto, S., J. Electrochem. Soc. 135, 1030 (1988).Google Scholar
7. Ibbs, K.G. and LLloyd, M., in CHARACTERISTICS OF LASER IMPLANTATION DOPING, edited by Osgood, R.M., Brueck, S.R.J., Schlossberg, H.R. (Mater. Res. Soc. Proc. 17, Boston, PA 1982) pp.243–248.Google Scholar
8. Jellison, G.E. Jr.,and Modine, F.A., Appl. Phys. Lett. 41, 180 (1982).Google Scholar
9. Irion, M.P. and Kompa, K.L., J. Chem. Phys. 76,2338 (1982).Google Scholar
10. Beadle, W.E., Tsai, J.C.C., and Plummer, R.D., OUICK REFERENCE MANUAL, John Wiley & Sons, New York, 1985). pp.2–37.Google Scholar