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Heteroepitaxial Growth of Ir/ZrN Layered Electrode on (100)Si Substrate for Ferroelectric Capacitor

Published online by Cambridge University Press:  10 February 2011

Sadayoshi Horii ,
Seiji Yokoyama  and
Susumu Horita
Sadayoshi Horii
Affiliation:
Delegated from Kokusai Electric Co., Ltd, Toyama, JAPAN
Seiji Yokoyama
Affiliation:
Japan Advanced Inst. of Science and Technology, School of Material Science, Ishikawa, JAPAN
Susumu Horita
Affiliation:
Japan Advanced Inst. of Science and Technology, School of Material Science, Ishikawa, JAPAN
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Abstract

An Ir film was grown heteroepitaxially on the epitaxial (100)ZrN film deposited on the (100)Si substrate by sputtering. Further, we obtained a heteroepitaxial (001)PZT film on the epitaxial (100)Ir/(100)ZrN/(100)Si substrate structure by reactive sputtering. The crystallographic relationship was cube-on-cube. The polarization-electric field hysteresis loop of the 300-nm-thick epitaxial PZT film with a top electrode of IrO2 showed a saturated square shape at an ac amplitude of 5V, and the remanent polarization, 2Pr, and coercive field, 2Ec, were 60 μC/cm 2 and 80 kV/cm, respectively. The Pr was not reduced up to 5×1010 switching cycles with a ±10 V bipolar pulse train. The leakage current of the PZT film at +5 V and –5 V was about 8.0× 10−8 and 2.5 ×10−7 A/cm2, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 85
Copyright
Copyright © Materials Research Society 2000

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