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HgCdTe/CdTe Multiple Quantum Wells: Growth, Stability, and Optical Properties

Published online by Cambridge University Press:  25 February 2011

R.D. Feldman ,
R.F. Austin ,
C.L. Cesar ,
M.N. Islam ,
C.E. Soccolich ,
Y. Kim  and
A. Ourmazd
R.D. Feldman
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
R.F. Austin
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
M.N. Islam
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
C.E. Soccolich
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
Y. Kim
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
A. Ourmazd
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
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Abstract

We have grown HgCdTe/CdTe multiple quantum wells by molecular beam epitaxy which show room temperature photoluminescence and sharp absorption steps at mid-infrared wavelengths. Quantitative chemical mapping, performed by transmission electron microscopy, indicates minimal interdiffusion during growth. Annealing experiments performed at higher temperatures show that the interdiffusion coefficient is a strong function of the depth of the interface below the surface. Absorption spectra have been accurately modeled with a square well/envelope function approach. The films have been used to passively mode lock color center lasers and produce pulses as short as 120 fsec near 2.7 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 113
Copyright
Copyright © Materials Research Society 1991

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References

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