Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T19:34:44.921Z Has data issue: false hasContentIssue false
  • English
  • Français

High Gain, Low Threshold Current GaInAsP Based Vcsels for Operation at 1.24UM

Published online by Cambridge University Press:  11 February 2011

Zhuopeng Tan ,
Yixin Li  and
Aris Christou
Zhuopeng Tan
Affiliation:
Department of Materials Science and Engineering, University of Maryland, MD 20742
Yixin Li
Affiliation:
Department of Materials Science and Engineering, University of Maryland, MD 20742
Aris Christou
Affiliation:
Department of Materials Science and Engineering, University of Maryland, MD 20742
Get access

Abstract

An electrically pumped 1.24um GaxIn1-xAsyP1-y Vertical Cavity Surface Emitting Laser (VCSEL) has been designed and simulated. Threshold gain of 153cm-1 and threshold current of 1.00mA was obtained. The external efficiency predicted is 0.31. Also the optimized design of VCSEL structure is presented in this article. GaInAsP and AlInAs constitute the Distributed Bragg Reflectors (DBRs) multilayer stack. Reflectivity of the top DBRs is 0.97 and reflectivity of the bottom DBRs is 0.9978 and is shown to provide a good resonant cavity and sufficient lasing intensity. Compared with other reported structures, the present VCSEL has a lower threshold current and higher threshold gain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.45
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Otsubo, Koji, Nishijima, Yoshito, Ishikawa, Hiroshi:. FUJITSU Sci. Tech. J., 34, 2, pp. 212–222 (December, 1998)Google Scholar
2. Linnik, Maria: Novel Devices and Heterostructures Based on Modulated Dielectric Properties of Materials, pp180–220, (2001)Google Scholar
3. Towe, Elias, Leheny, Robert F., Yang, Andrew: IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 6, NO. 6, pp. 1458–1464, November 2000.Google Scholar
4. Linnik, M., Christou, A.: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL, 48, No. 10, pp. 2228–2237 October 2001.Google Scholar
5. Koley, B. M. D., Jin, R., Simonis, G., Pham, J., McLane, G., Johnson, F. and Whaley, R. Jr, J. Appl. Phys. 84 (1) 600 (1998)Google Scholar
6. Rosenzweig, Menfred, Mohrle, Martin, Duser, Heiko and Venghaus, Herbert:: IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 27, NO. 6 pp. 18041811, June 1991 Google Scholar
7. Osinski, J.S.; Grodzinski, P.; Zou, Y.; Dapkus, P.D. IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 29, No. 6, June 1993, pp 1576–1585 Google Scholar
8. Lott, J.A.; Ledentsov, N.N.; Ustinov, V.M.; Alferov, Zh.I. In: Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170). Washington, DC, USA: Opt. Soc. America, 2001. p. 137 Conference PaperGoogle Scholar
9. Hofmann, Martin r., Gerhardt, Nils, Wagner, Anke M., Ellmers, C., Hohnsdorf, Falko, Koch, Jorg, etc: IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 38, No. 2 pp. 213–221, February 2002 Google Scholar
10. Ramakrishnan, A., Steinle, G., Supper, D., Degen, C. and Ebbinghaus, G.: Electronics Letters, pp 322–323, 28th March 2002, Vol. 38 No. 7Google Scholar
11. Klem, J.F., Serkland, D.K., and Geib, K.M.: Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE, Vol 2, 2001 pp 596–597.Google Scholar