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High Hydrogen Content Silicon Nitride For Photovoltaic Applications Deposited By Hot-Wire Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Jason K. Holt ,
Maribeth Swiatek ,
David G. Goodwin ,
Harry A. Atwater  and
Thomas J. Watson
Jason K. Holt
Affiliation:
Laboratories of Applied PhysicsCalifornia Institute of TechnologyPasadena, CA 91125
Maribeth Swiatek
Affiliation:
Laboratories of Applied PhysicsCalifornia Institute of TechnologyPasadena, CA 91125
David G. Goodwin
Affiliation:
Laboratories of Applied PhysicsCalifornia Institute of TechnologyPasadena, CA 91125
Harry A. Atwater
Affiliation:
Laboratories of Applied PhysicsCalifornia Institute of TechnologyPasadena, CA 91125
Thomas J. Watson
Affiliation:
Laboratories of Applied PhysicsCalifornia Institute of TechnologyPasadena, CA 91125
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Abstract

Silicon nitride films have been grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. Quadrupole mass spectrometry measurements revealed that NH3 should be present in large excess relative to SiH4 (<10), due to its lower decomposition probability on the wire. Silicon nitride films were produced with refractive indices ranging from 1.8-2.5 and H-content from 9-18 atomic % as the flow ratio increased from 1% to 8%. Fourier Transform Infrared Spectroscopy revealed a change from predominantly N-H to Si-H bonding as the flow ratio increases beyond 6%. Subsequent annealing studies showed different kinetics for H release from Si versus N. Films grown with a low SiH4/NH3 ratio were found to oxidize readily (23 atomic %), while larger ratios yielded no oxygen incorporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A10.2
Copyright
Copyright © Materials Research Society 2002

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