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High Performance 0.5 and 0.25 μm Gate GaAs Mesfet Grown by MOCVD Using Tertiarybutylarsine
Published online by Cambridge University Press: 25 February 2011
Abstract
Using tertiarybutylarsine and trimethylgallium a GaAs MESFET structure was grown and fabricated into half and quarter micron devices. The typical transconductance and unity current gain frequency (ft) for the half micron device were 360 mS/mm and 24 GHZ respectvely. The corresponding numbers for the quarter micron devices were 510 mS/mm and 55 GHZ respectively.
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- Copyright © Materials Research Society 1991
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