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High Performance Of Gettering In Hydrogen Annealed Wafer
Published online by Cambridge University Press: 15 February 2011
Abstract
This paper reports on the study of the gettering of nickel contamination in hydrogen annealed CZ-silicon wafers by using method of wet chemical analysis. According to the wet chemical analysis, we believe that the hydrogen annealed wafer is of high quality in the region beneath the surface (DZ) and has a higher gettering ability for nickel compared with conventional CZ wafers. This observation is also in agreement with our MOS C-t measurements.
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- Copyright © Materials Research Society 1996
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