Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-18T04:49:26.288Z Has data issue: false hasContentIssue false
  • English
  • Français

High Precision Physical Model for Nickel MILC

Published online by Cambridge University Press:  01 February 2011

C. F. Cheng ,
W. M. Cheung ,
K. L. Ng ,
P. J. Chan ,
M. C. Poon ,
Mansun Chan  and
C. W. Kok
C. F. Cheng
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
W. M. Cheung
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
K. L. Ng
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
P. J. Chan
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
M. C. Poon
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
Mansun Chan
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
C. W. Kok
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science & Technology, Sai Kung, Hong Kong
Get access

Abstract

Mechanism and growth rate of Metal-Induced-Lateral-Crystallization (MILC) with annealing temperature range from 550°C to 625°C were studied. Base on the MILC growth mechanism and effect of metal diffusion, a modeling on metal impurity distribution was developed. The modeling can be used to predict the distribution of metal impurity formed in the polysilicon layer after MILC annealing process. By applying the modeling, effects of annealing on the metal impurity distribution can be analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A22.8
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wang, Hongmei, Chan, Mansun, Jagar, Singh, Poon, M. C., Qin, Ming and Wang, Yangyuan, “High Performance Single Grain Thin Film Transistor (TFT) formed by Metal Induced Lateral Crystallization”, IEEE Trans. Elec. Dev., August 1999.Google Scholar
2. Jagar, Singh, Chan, Mansun, Poon, M.C., Wang, Hongmei, Qin, Ming, Ko, Ping K., Wang, Yangyuan, “Single Grain Thin Film Transistor (TFT) with SOI Performance formed by Metal Induced Lateral Crystallization”, 1999 IEDM Digest.Google Scholar
3. Meng, Z., Wang, M. and Wong, M., “High Performance Low Temperature Metal-Induced Unilaterally Crystallized Polycrystalline Silicon Thin Film Transistor for System-on-Panel Applications”, IEEE Trans. Elec. Dev., vol. 47, no. 2, pp. 404–409, 2000.Google Scholar
4. Weber, E. R., Appl. Phys. A, vol. 30, no. 1, pp. 1–22, 1983.Google Scholar
5. Lietoila, A., Wakita, A., Sigmon, T. W. and Gibbons, J. F., J. Appl. Phys. vol. 53, p. 4399, 1982.Google Scholar
6. Hayzelden, C. and Batstone, J. L., “Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films”, J. Appl. Phys., vol. 73, no. 12, pp. 8279–8289, 1993 Google Scholar