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High rate deposition of cluster-suppressed amorphous silicon films deposited using a multi-hollow discharge plasma CVD

Published online by Cambridge University Press:  31 January 2011

Kazunori Koga ,
Hiroshi Sato ,
Yuuki Kawashima ,
William Makoto Nakamura  and
Masaharu Shiratani
Kazunori Koga
Affiliation:
koga@ed.kyushu-u.ac.jp
Hiroshi Sato
Affiliation:
h.sato@plasma.ed.kyushu-u.ac.jp, Kyushu University, Department of Electronics, Fukuoka, Japan
Yuuki Kawashima
Affiliation:
y.kawashima@plasma.ed.kyushu-u.ac.jp, Kyushu University, Department of Electronics, Fukuoka, Japan
William Makoto Nakamura
Affiliation:
w.nakamura@plasma.ed.kyushu-u.ac.jp, Kyushu University, Department of Electronics, Fukuoka, Japan
Masaharu Shiratani
Affiliation:
siratani@plasma.ed.kyushu-u.ac.jp, Kyushu University, Department of Electronics, Fukuoka, Japan
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Abstract

We have examined effects of gas velocity and gas pressure on a deposition rate of hydrogenated amorphous silicon (a-Si:H) films and on a volume fraction of clusters in the films using a multi-hollow discharge plasma CVD method. The maximum deposition rate realized for each pressure exponentially increases with decreasing the pressure from 1.0 Torr to 0.1 Torr, whereas the volume fraction of clusters very slightly increases with increasing the deposition rate. Based on the results, we have succeeded in depositing highly stable a-Si:H films of 4.9×1015cm-3 in a stabilized defect density at a rate of 3.0nm/s using the method.

Keywords

plasma-enhanced CVD (PECVD) (deposition)Sithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q07-10
Copyright
Copyright © Materials Research Society 2010

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