Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-19T10:54:51.967Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates

Published online by Cambridge University Press:  10 February 2011

A. Saxler ,
M. A. Capano ,
W. C. Mitchel ,
P. Kung ,
X. Zhang ,
D. Walker  and
M. Razeghi
A. Saxler
Affiliation:
ECE Department, Northwestern University, Evanston, IL 60208, razeghi@ece.nwu.edu Wright Laboratory, Materials Directorate, Wright-Patterson AFB, OH, 45433–7707
M. A. Capano
Affiliation:
Wright Laboratory, Materials Directorate, Wright-Patterson AFB, OH, 45433–7707
W. C. Mitchel
Affiliation:
Wright Laboratory, Materials Directorate, Wright-Patterson AFB, OH, 45433–7707
P. Kung
Affiliation:
ECE Department, Northwestern University, Evanston, IL 60208, razeghi@ece.nwu.edu
X. Zhang
Affiliation:
ECE Department, Northwestern University, Evanston, IL 60208, razeghi@ece.nwu.edu
D. Walker
Affiliation:
ECE Department, Northwestern University, Evanston, IL 60208, razeghi@ece.nwu.edu
M. Razeghi
Affiliation:
ECE Department, Northwestern University, Evanston, IL 60208, razeghi@ece.nwu.edu
Get access

Abstract

X-ray rocking curves are frequently used to assess the structural quality of GaN thin films. In order to understand the information given by the line shape, we need to know the primary mechanism by which the curves are broadened. The GaN films used in this study were grown by low pressure metalorganic chemical vapor deposition (MOCVD) on (00•1) sapphire substrates. GaN films with both broad and very narrow (open detector linewidth of 40 arcseconds for the (00•2) GaN reflection) rocking curves are examined in this work. Reciprocal space maps of both symmetric and asymmetric reciprocal lattice points are used to determine that the cause of the broadening of GaN rocking curves is a limited in-plane coherence length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 477
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., and Oki, K., J. Cryst. Growth 115, 628 (1991).Google Scholar
2. Kung, P., Saxler, A., Zhang, X., Walker, D., Wang, T. C., Ferguson, I., and Razeghi, M., Appl. Phys. Lett. 66, 2958 (1995).Google Scholar
3. Fertitta, K. G., Holmes, A. L., Neff, J. G., Ciuba, F. J., and Dupuis, R. D., Appl. Phys. Lett. 65, 1823 (1994).Google Scholar
4. Piano, W. E., Major, J. S. Jr., Welch, D. F. and Speirs, J., Electron. Lett. 30, 2079 (1994).Google Scholar
5. Heying, B., Wu, X. H., Keller, S., Li, Y., Kapolnek, D., Keller, B. P., DenBaars, S. P., and Speck, J. S., Appl. Phys. Lett. 68, 643 (1996).Google Scholar
6. Qian, W., Skowronski, M., De Graef, M., Doverspike, K., Rowland, L. B., and Gaskill, D. K., Appl. Phys. Lett. 66, 1252 (1995).Google Scholar
7. Fewster, P. F., J. Appl. Cryst. 22, 64 (1989).Google Scholar
8. Fewster, P. F., Appl. Phys. A 58, 121 (1994).Google Scholar