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A High Stability Electrode Technology for Stacked SrBi2Ta2O2 Capacitors

Published online by Cambridge University Press:  10 February 2011

J. Kudo ,
M. Nagata ,
N. Ogata ,
S. Yamazaki ,
H. Urashima ,
A. Okutoh ,
T. Miyoshi  and
K. Ishihara
J. Kudo
Affiliation:
Corporate Research and Development Group, Sharp Corporation, Tenri city Nara 632-8567, Japan, jkudo@icg.sharp.co.jp
M. Nagata
Affiliation:
Corporate Research and Development Group, Sharp Corporation, Tenri city Nara 632-8567, Japan
N. Ogata
Affiliation:
Corporate Research and Development Group, Sharp Corporation, Tenri city Nara 632-8567, Japan
S. Yamazaki
Affiliation:
Corporate Research and Development Group, Sharp Corporation, Tenri city Nara 632-8567, Japan
H. Urashima
Affiliation:
Corporate Research and Development Group, Sharp Corporation, Tenri city Nara 632-8567, Japan
A. Okutoh
Affiliation:
Corporate Research and Development Group, Sharp Corporation, Tenri city Nara 632-8567, Japan
T. Miyoshi
Affiliation:
Corporate Research and Development Group, Sharp Corporation, Tenri city Nara 632-8567, Japan
K. Ishihara
Affiliation:
Corporate Research and Development Group, Sharp Corporation, Tenri city Nara 632-8567, Japan
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Abstract

A high stability electrode technology with TaSiN as a barrier metal was used to fabricate a stacked SBT capacitor array on polySi plugs, and hysteresis characteristics and contact properties of the stacked capacitor were studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 61
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Onishi, S., et al. , IEDM Digest of Technical Papers, p.843,1994 Google Scholar
2. Kudo, J., et al. , IEDM Digest of Technical Papers, p.609,1997 Google Scholar
3. Kolawa, E., et al. , IEEE Electron Devices Lett., vol. 12, no.6, P.321, 1991 Google Scholar