Hostname: page-component-7479d7b7d-767nl Total loading time: 0 Render date: 2024-07-13T14:47:43.528Z Has data issue: false hasContentIssue false
  • English
  • Français

High Temperature Thermal Processing for Ulsi Applications

Published online by Cambridge University Press:  15 February 2011

Kimberly G. Reid  and
A. R. Sitaram
Kimberly G. Reid
Affiliation:
Advanced Products Research and Development Laboratory, Motorola 3501 Ed Bluestein Blvd., Austin, TX 78721.
A. R. Sitaram
Affiliation:
Advanced Products Research and Development Laboratory, Motorola 3501 Ed Bluestein Blvd., Austin, TX 78721.
Get access

Abstract

The diversity of semiconductor manufacturing as well as the decreasing thermal budget for ULSI devices has driven semiconductor equipment manufacturers to develop and improve thermal processing solutions. Recent advances include new temperature measurement systems for rapid thermal processors (RTP), the development of the small batch fast ramp furnace (SBFR), as well as improved capability and load size in the conventional vertical batch furnace (BF). This paper will review the RTP, SBFR, and batch furnace for typical atmospheric front end of the line applications. Throughput and cycle time will be modeled for each type of system. Sematech's cost of ownership model will be employed to evaluate the relative importance of throughput, mean time between failure, and equipment cost. And finally an overview discussion of the issues associated with temperature measurement and system configurations of the RTP will be given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 201
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Burggraaf, Pieter, Semiconductor International, 3, 45(1995).Google Scholar
2 Miller, Mel, “Titanium Silicide Formation by RTA: Device Implications, 1st International Rapid Thermal Processing Conference, Scottsdale, Az., September 1993.Google Scholar
3 Larson, L.A., Martinez, R.A., and Lindholm, D., “Cost of Ownership Analysis of the Manufacturing Goals for Rapid Thermal Processing Used in 0.25 Micron Manufacturing”, 1st International Rapid Thermal Processing Conference, Scottsdale, Az., September 1993.Google Scholar