Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T17:57:42.258Z Has data issue: false hasContentIssue false

Highly crystalline graphene formation from graphene oxides by ultrahigh temperature process using solar furnace

Published online by Cambridge University Press:  26 August 2015

Yoshihiro Kobayashi
Affiliation:
Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan
Takashi Ishida
Affiliation:
Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan
Yuichiro Miyata
Affiliation:
Department of Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan
Yoshihiko Shinoda
Affiliation:
Wakasawan Energy Research Center, Tsuruga, Fukui 914-0192, Japan
Get access

Abstract

This work reports the efficient structural restoration of defective graphene oxide (GO) to a crystalline graphene by an ultrahigh temperature process at around 1800 °C achieved by a solar furnace. The GO samples were treated at high temperature by irradiating concentrated sunlight and focusing it on the sample under an inert nitrogen environment at atmospheric and reduced pressure. The structural restoration of GO was analyzed by Raman spectra, and the features of their D- and 2D-bands were remarkably improved at ultrahigh temperatures. The restoration was induced not by a photochemical reaction but dominantly by a thermally stimulated reaction. The process under reduced pressure gives rise to significantly better features in the Raman spectra than that of the atmospheric condition. This tendency shows that a trace amount of impurities contained in pure nitrogen gas are not negligible and attack the GO surfaces to induce considerable defects. These results indicate the superiority of the ultrahigh temperature process at reduced pressure for efficient GO restoration and the formation of highly crystalline graphene.

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Park, S. and Ruoff, R. S., Nature Nanotechnology 4, 217 (2009).CrossRefGoogle Scholar
Eda, G. and Chhowalla, M., Adv. Mater. 22, 2392 (2010).CrossRefGoogle Scholar
Pei, S. and Cheng, M.-M., Carbon 50, 3210 (2012).CrossRefGoogle Scholar
Akhavan, O., Carbon 48, 509 (2010).CrossRefGoogle Scholar
Becerril, H. A., Mao, J., Liu, Z., Stoltenberg, R. M., Bao, Z., and Chen, Y., ACS Nano 2, 463 (2008).CrossRefGoogle Scholar
Dong, X., Su, C.-Y., Zhang, W., Zhao, J., Ling, Q., Huang, W., Chen, P., and Li, L.-J., Phys. Chem. Chem. Phys. 12, 2164 (2010).CrossRefGoogle Scholar
Mattevi, C. et al. , Adv. Funct. Mater. 19, 2577 (2009).CrossRefGoogle Scholar
Su, C.-Y., Xu, Y., Zhang, W., Zhao, J., Tang, X., Tsai, C.-H., and Li, L.-J., Chem. Mater. 21, 5674 (2009).CrossRefGoogle Scholar
Wang, X., Zhi, L., and Müllen, K., Nano Lett. 8, 323 (2008).CrossRefGoogle Scholar
Dai, B., Fu, L., Liao, L., Liu, N., Yan, K., Chen, Y., and Liu, Z., Nano Res. 4, 434 (2011).CrossRefGoogle Scholar
Liang, Y., Frisch, J., Zhi, L., Norouzi-Arasi, H., Feng, X., Rabe, J. P., Koch, N., and Müllen, K., Nanotechnology 20, 434007 (2009).CrossRefGoogle Scholar
López, V., Sundaram, R. S., Gómez-Navarro, C., Olea, D., Burghard, M., Gómez-Herrero, J., Zamora, F., and Kern, K., Adv. Mater. 21, 4683 (2009).CrossRefGoogle Scholar
Su, C.-Y., Xu, Y., Zhang, W., Zhao, J., Liu, A., Tang, X., Tsai, C.-H., Huang, Y., and Li, L.-J., ACS Nano 4, 5285 (2010).CrossRefGoogle Scholar
Negishi, R. and Kobayshi, Y., Appl. Phys. Lett. 105, 253502 (2014).CrossRefGoogle Scholar
Long, D., Li, W., Qiao, W., Miyawaki, J., Yoon, S.-H., Mochidab, I., and Ling, L., Nanoscale 3, 3652 (2011).CrossRefGoogle Scholar
Ghosh, T., Biswas, C., Oh, J., Arabale, G., Hwang, T., Luong, N. D., Jin, M., Lee, Y. H., and Nam, J.-D., Chem. Mater. 24, 594 (2012).CrossRefGoogle Scholar
Rozada, R., Paredes, J. I., Villar-Rodil, S., Martínez-Alonso, A., and Tascón, J. M. D., Nano Res. 6, 216 (2013).CrossRefGoogle Scholar
Song, L., Khoerunnisa, F., Gao, W., Dou, W., Hayashi, T., Kaneko, K., Endo, M., and Ajayan, P. M., Carbon 52, 608 (2013).CrossRefGoogle Scholar
Murray, J. P., Steinfeld, A., and Fletcher, E. A., Energy 20, 695 (1995).CrossRefGoogle Scholar
Cançado, L. G. et al. , Nano Lett. 11, 3190 (2011).CrossRefGoogle Scholar
Lucchese, M. M., Stavale, F., Ferreira, E. H. M., Vilani, C., Moutinho, M. V. O., Capaz, R. B., Achete, C. A., and Jorio, A., Carbon 48, 1592 (2010).CrossRefGoogle Scholar
Oberlin, A., Carbon 22, 521 (1984).CrossRefGoogle Scholar