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High-Performance Structure of Light-Emitting Diode for GaAs on Si Tetsuroh Minemura

Published online by Cambridge University Press:  26 February 2011

Junko Asano  and
Yoshiaki Yazawa
Junko Asano
Affiliation:
Hitachi, Ltd., Hitachi Research Laboratory, 4026 Kuj i-cho, Hitachi-shi, I barak i 319–12, Japan
Yoshiaki Yazawa
Affiliation:
Hitachi, Ltd., Hitachi Research Laboratory, 4026 Kuj i-cho, Hitachi-shi, I barak i 319–12, Japan
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Abstract

The Light-emitting diode (LED) structures have been investigated to realize high-performance LEDs on Si substrates. The light intensity of the LEDs with p-GaAs / n-GaAs / Si structures, which was effected from thickness of the p-GaAs layer, was only about 55% of the homoepitaxialLED. The light intensity of the LED with an n-GaAs/p-GaAs/Si structure, however, was about four times stronger than those of p-GaAs/n-GaAs/Si structures. After continuous operation for two hours, the intensity still kept much stronger than those of the LEDs with p-GaAs / n-GaAs / Si structures, although it decreased to 15% of the homoepitaxial LED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 511
Copyright
Copyright © Materials Research Society 1992

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References

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