Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T20:22:12.111Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogenation Effect of Amorphous Silicon Thin Film Transistors by Atmospheric Pressure CVD

Published online by Cambridge University Press:  01 January 1993

Byung Chul Ahn ,
Jeong Hyun Kim ,
Dong Gil Kim ,
Byeong Yeon Moon ,
Kwang Nam Kim ,
Chan Woo Lee  and
Jin Jang
Dong Gil Kim
Affiliation:
Anyang Research Lab.,GoldStar Co. Ltd., Anyang-shi 430-080,Korea
Jin Jang
Affiliation:
Kyung Hee University, Dongdaemoon-ku, Seoul 130-701, Korea
Get access

Abstract

The hydrogenation effect was studied in the fabrication of amorphous silicon thin film transistor using APCVD technique. The inverse staggered type a-Si TFTs were fabricated with the deposited a-Si and SiO2 films by the atmospheric pressure (AP) CVD. The field effect mobility of the fabricated a-Si TFT is 0.79 cm2/Vs and threshold voltage is 5.4V after post hydrogenation. These results can be applied to make low cost a-Si TFT array using an in-line APCVD system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 901
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Matsumura, M. and Sugiura, O., Proc. 1992 Inter. Conf. Solid State Devices and Materials (Tsukuba, Japan), p. 46.Google Scholar
2. Ahn, B.C., Kim, J.H., Hong, C.H., Kim, W.Y., Kim, K.N., Kang, H.K. and Jang, J., Mat. Res. Soc. Symp. Proc. (Fall, 1992), to be published.Google Scholar
3. Ellis, F.B. Jr. and Gordon, R.G., J. Appl. Phys. 54, 5381 (1983).Google Scholar
4. Breddels, P.A., Kanoh, H., Sugiura, O. and Matsumura, M., Jpn. J. Appl. Phys. 30, 233 (1991).Google Scholar
5. Ellis, F.B., Jr., J, Gordon, R.G., Paul, W. and Yacobi, B.G., J. Appl. Phys. 55, 4309 (1984).Google Scholar
6. Berman, A., Chen, Z.M., Chik, K.P., John, P.K., Lim, P.K., Prasad, A., Srinivasan, G., Tong, B.Y., Wong, S.K., Journal of Non-Cryst. Solids 59 & 60, 751 (1983).Google Scholar
7. Kanoh, H., Yasukawa, M., Sugiura, O., Breddels, P.A. and Matsumura, M., Jpn. J. Appl. Phys. 29, 2366 (1990).Google Scholar
8. Ahn, B.C., Shimizu, K., Satoh, T., Kanoh, H., Sugiura, O. and Matsumura, M., Jpn. J. Appl. Phys. 30 , 3695 (1991).Google Scholar
9. Chu, T.L., Chu, S.S., Ang, S.T., Duong, A., Han, Y.X. and Lin, Y.H., J. Appl. Phys. 60, 4268 (1986).Google Scholar
10. Kanoh, K., Sugiura, O., Breddels, P.A. and Matsumura, M., Jpn. J. Appl. Phys. 29, 2358 (1990).Google Scholar
11. Matsumura, M., in Plasma Deposited Thin Films, ed. by Mort, J. and Jansen, F., (CRC, Florida , 1986), P.205.Google Scholar