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Hydrogen-Induced Passivation of Deep Traps in n-GaAs:Si Grown on LT-GaAs

Published online by Cambridge University Press:  26 February 2011

E. C. Paloura ,
A. Ginoudi ,
B. Theys ,
J. Chevallier ,
C. B. Lioutas ,
J. Kalomiros ,
M. Lagadas  and
Z. Hatzopoulos
E. C. Paloura
Affiliation:
Aristotle Univ. of Thessaloniki, Department of Physics, GR–54006, Greece.
A. Ginoudi
Affiliation:
University of Thrace, Dept. of Electrical and Computer Engineering, 67100, Greece.
B. Theys
Affiliation:
C.N.R.S., Lab. de Physique des Solides de Bellevue, F.92.195 Meudon Cedex, France.
J. Chevallier
Affiliation:
C.N.R.S., Lab. de Physique des Solides de Bellevue, F.92.195 Meudon Cedex, France.
C. B. Lioutas
Affiliation:
Aristotle Univ. of Thessaloniki, Department of Physics, GR–54006, Greece.
J. Kalomiros
Affiliation:
Aristotle Univ. of Thessaloniki, Department of Physics, GR–54006, Greece.
M. Lagadas
Affiliation:
F.O.R.T.H.-I.E.S.L., GR–71110, Crete, Greece.
Z. Hatzopoulos
Affiliation:
F.O.R.T.H.-I.E.S.L., GR–71110, Crete, Greece.
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Abstract

We study the hydrogen-induced passivation of interface traps in n-GaAs:Si, grown by MBE at 580°C, with a buffer layer grown at 200 to 250°C (LT-buffer). In the as-grown samples, the LT-buffer contains As-precipitates, with a density of 4×1016 cm−3 and a diameter that depends on the LT-buffer growth temperature and takes values in the range 4–8nm. The epilayer/LT-buffer interface in the as-grown samples is characterised by interface related traps which dominate the electrical behaviour of the epitaxial layer. Secondary ion mass spectroscopy profiling of deuterated samples reveals that 2H has a nearly uniform concentration throughout the epilayer, while it accumulates at the interface. Hydrogenation induces a reduction of the interface trap concentration and a significant improvement of the carrier mobility values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 459
Copyright
Copyright © Materials Research Society 1995

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