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The Impact of Deposition Parameters on the Optical and Compositional Properties of Er Doped SRSO Thin Films Deposited by ECR-PECVD

Published online by Cambridge University Press:  01 February 2011

Michael Flynn ,
Jacek Wojcik ,
Subhash Gujrathi ,
Edward Irving  and
Peter Mascher
Michael Flynn
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Canada
Jacek Wojcik
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Canada
Subhash Gujrathi
Affiliation:
Groupe de recherche en physique et technologie des couches minces, Lab. René -J.-A. Lévesque, Département de Physique, Université de Montréal, Montréal, Canada
Edward Irving
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Canada
Peter Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Canada
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Abstract

Silicon rich silicon oxide films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD). The films were doped in situ using an organometallic precursor. Optical measurements show that the refractive indices of the films are determined by the silane to oxygen flow rate ratio used during the depositions. The erbium content as measured by elastic recoil detection (ERD) is also strongly dependent on the oxygen flow rate, with more erbium being incorporated in the more highly oxygenated films. The erbium content was also found to vary inversely with plasma power, which did not have a significant effect on the silicon to oxygen ratio. This allows the erbium and excess silicon levels of the films to be controlled independently.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V5.7/FF5.7
Copyright
Copyright © Materials Research Society 2005

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