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The Impact of Pre-Silicidation Heat Treatment and Dopant Effects on the Thermal Stability of Cosi2 Polycide During Rapid Thermal Annealing

Published online by Cambridge University Press:  21 February 2011

W. Chen ,
J. Lin ,
S. Banerjee  and
J. Lee
W. Chen
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
J. Lin
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
S. Banerjee
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
J. Lee
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

The effects of heat treatment of polysilicon and amorphous Si films on their microstructure and thermal stability of polycides formed on these films have been studied. The number of grain boundaries decreases after pre-silicidation heat treatment in polysilicon due to grain growth but increases in amorphous Si due to nucleation. Since the thermal stability of CoSi2 polycide films was found to be closely related to the number of grain boundaries in the underlying silicon substrate, pre-silicidation heat treatments degrade the thermal stability of CoSi2 on as-deposited amorphous Si and improve the thermal stability of CoSi2 on asdeposited polysilicon. Doping does not have as pronounced an effects as substrate microstructure on CoSi21 polycide thermal stability, especially when dopants are introduced after silicidation by ion implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 81
Copyright
Copyright © Materials Research Society 1993

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References

1. Wang, Q., Osburn, C. M., and Canovai, C., IEEE Trans. Ele. Dev. 11, 2486 (1992).Google Scholar
2. Chen, W., Lin, J., Banerjee, S., and Lee, J. in Advanced Metallization and Processing for Semiconductor Devices and Circuits-II, edited by Katz, A., Nissim, Y. I., Murarka, S. P., and Harper, J. M. E. ( Mater. Res. Soc. Proc. 260, Pittsburgh, PA, 1992).Google Scholar
3. Phillips, J. R., Revesz, P., Olowolafe, J. O., and Mayer, J. W., in Polysilicon Thin Films and Interfaces, edited by Raicu, B., Kamins, T., and Thompson, C.V. (Mater. Res. Soc. Proc. M, Pittsburgh, PA 1990) pp. 57–63.Google Scholar
4. Chen, W., Lin, J., Banerjee, S., and Lee, J., to be submitted to Appl. Phys. Lett.Google Scholar
5. Murarka, S. P., Chang, C. C., and Adams, A. C., J. Vac.Sci. Technol. B, 5, 865 (1987).Google Scholar
6.Vaidya, S., Murarka, S. P., and Sheng, T. T., J. Appl. Phys., 58, 971 (1985).Google Scholar