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Improvement of Ohmie Contacts on GaAs with In-Situ Cleaning

Published online by Cambridge University Press:  26 February 2011

F. Ren ,
S. J. Pearton ,
T. R. Fullowan ,
W. S. Hobson ,
S. N. G. Chu  and
A. B. Emerson
F. Ren
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
T. R. Fullowan
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
A. B. Emerson
Affiliation:
AT&T Bell Laboratories Murray Hill, New Jersey 07974
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Abstract

An in-situ argon ion-mill clean step prior to ohmic metal deposition combined with a Mo barrier layer AuGe based ohmic metallization which is compatible with dry-etch process have been demonstrated to improve the uniformity of the contact parameters and reduce the contact resistance. After ion mill cleaning, the native oxide regrowth of MBE grown GaAs and AlGaAs layers in vacuum chamber was also studied to optimize the processing. These oxide layers were identified as the cause of problems in the formation of good ohmic contacts to the GaAs or AlGaAs, the Mo diffraction barrier also reduced the contact resistivity with excellent adesion, smooth morphology, and sharp edge definition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 417
Copyright
Copyright © Materials Research Society 1992

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References

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