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Improvement of Strength and Reliability of Structural Ceramic through Ion Implantations

Published online by Cambridge University Press:  22 February 2011

Rabi S. Bhattacharya  and
A.K. Rai
Rabi S. Bhattacharya
Affiliation:
UES, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432
A.K. Rai
Affiliation:
UES, Inc., 4401 Dayton-Xenia Road, Dayton, OH 45432
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Abstract

The feasibility of strength and reliability improvements of Si3N4 through ion implantations has been studied. The approach has been to implant elements that may chemically combine with themselves to form precipitates after appropriate annealing. These precipitates can improve the strength and reliability of ceramics through the introduction of a compressive stress in the implanted surface layer and/or by modifying the fracture originating machining flaws. Sequential implantations of ion pairs of Ti+ and C+, and Si+ and C+ were performed at energies in the range 46 to 175 keV and at doses of 1×1017 cm-2 for each ion species. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and Transmission electron microscopy (TEM) techniques were used to analyze the implanted layer. Strength and reliability were determined from four-point flexure strength measurements. Precipitates of TiN and C were found to form in Ti++C+ and Si++C+ implanted Si3N4 surfaces, respectively. Si++C+ implantation resulted in improvements of both strength and reliability of Si3N4, while Ti++C+ implantations had no effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 599
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 McHargue, C.J. and Yust, C.S., J. Am. Ceram. Soc. 67, 117 (1984).Google Scholar
2 Bhattacharya, R.S., Mah, T., Rai, A.K., Mendiratta, M.G. and Pronko, P.P., ASM Conference Proceedings, “Ion Implantation and Plasma Assisted Processes,” ed. Hochman, R.F. et al. , Atlanta, GA, 22–25 May 1988, p. 83.Google Scholar
3 Bohn, H.G., Williams, J.M., McHargue, C.J., and Begun, G.M., J. Mater. Res. 2, 107 (1987).Google Scholar
4 Petrovic, J.J. and Mendiratta, M.G., ASTM STP 678, S.W. Freiman, ed., American Society for Testing and Material, 1979, p. 83.Google Scholar
5 Wang, P.S., Malghan, S.G., Hsu, S.M. and Wittberg, T.N., Surf. Interface Anal. 18, 159 (1992).Google Scholar
6 Press, W.H., Flannery, B.P., Teukolsky, S.A. and Vetterling, W.T., Numerical Recipes, pp. 400, 407-420, 523-528. Cambridge University Press, New York (1987).Google Scholar
7 Oblas, D.W., Sarin, V.K. and Ostreicher, K., J. Mat. Res. 7, 2579 (1992).Google Scholar
8 McLean, A.F. and Hartsock, D.L., in “Structural Ceramics, Treatise on Materials Science and Technology”, Vol. 29, Ed. Wachtman, J.B. Jr., p. 27, Academic Press, 1989.Google Scholar