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Impurity Interactions with Dislocations in Silicon

Published online by Cambridge University Press:  28 February 2011

Koji Sumino
Koji Sumino*
Affiliation:
The Research Institute for Iron, Steel and Other Metals, Tohoku University, 2-1-1 Katahira, Sendai 980, Japan
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Abstract

A review is presented of some aspects on the interactions of light element impurities with dislocations in silicon crystals on the basis of the works done by the author's group. Topics taken up are gettering of impurities by dislocations, electrical and optical activities of impurity atoms accumulated at the dislocation core, immobilization of dislocations due to impurity gettering, and the mechanism of strengthening of silicon wafers due to doping of impurities such as oxygen and nitrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 369
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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