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In Situ Characterization of Metallorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

R. Scarmozzino ,
T. Cacouris  and
R.M. Osgood Jr.
R. Scarmozzino
Affiliation:
Columbia University, New York, N.Y. 10027
T. Cacouris
Affiliation:
Columbia University, New York, N.Y. 10027
R.M. Osgood Jr.
Affiliation:
Columbia University, New York, N.Y. 10027
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Abstract

In situ measurement of resistance has been used for the realtime monitoring of metallorganic chemical vapor deposition (CVD) growth characteristics. In particular, a novel technique for measuring metallorganic CVD activation energies is presented. The micron scale geometry of the experiment makes it relevant to work in localized laser CVD. The technique has been used to measure the CVD activation energy of dimethylaluminum hydride (DMAlH). In addition, a variant of the technique has been used to study the growth stage of a resistless two-step metallization process (nucleation / selective CVD) employing DMAIH as the source gas in both steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 121
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Carlton, H.E. and Oxley, J.H., AIChE J. 12, 86 (1967).Google Scholar
2. Ehrlich, D.J. and Tsao, J.Y., J. Vac. Sci. Technol. B 1, 969 (1983).Google Scholar
3. Bauerle, D., “Chemical Processing with Lasers,” (Springer, 1986), p. 92.Google Scholar
4. Petzoldt, F., Piglmayer, K., Krauter, W., and Bauerle, D., Appl. Phys. A 35, 155 (1984).Google Scholar
5. Gottsleben, O. and Stuke, M., Appl. Phys. Lett. 52(26), 2230 (1988).Google Scholar
6. Cacouris, T., Scelsi, G., Shaw, P., Scarmozzino, R., and Osgood, R.M., Appl. Phys. Lett. 52(22), 1865 (1988).Google Scholar
7. Wartick, T. and Schlesinger, H.I., J. Am. Chem. Soc. 75, 835 (1953).Google Scholar
8. Anderson, G.A., Almenningen, A., Forgaard, F.R. and Haaland, A., Chem. Commun., 480 (1971).Google Scholar
9. Higashi, G.S. and Fleming, C.G., Appl. Phys. Lett. 48, 1051 (1986).Google Scholar