Hostname: page-component-7bb8b95d7b-cx56b Total loading time: 0 Render date: 2024-09-10T14:59:51.881Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ Monitoring of III-V Processing

Published online by Cambridge University Press:  10 February 2011

F. L. Terry Jr
F. L. Terry Jr*
Affiliation:
Solid State Electronics Laboratory, Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI. 48109-2122, fredty@umich.edu
Get access

Abstract

Fabrication of high performance III-V devices and integrated circuits depends on careful control of layer thicknesses and compositions in the as-grown epitaxial layers and in the etching of these layers. The relatively high value of compound semiconductor devices (compared with high-volume Si devices) makes the use of advanced process control (with expensive in situ sensors) potentially advantageous. Considerable attention has been given to the problems of realtime feedback control of MBE growth systems. In this paper, I will discuss experiences with use of both in situ and ex situ monitors for controlling reactive ion etching (RIE) of III-V materials. Specific examples from an electron cyclotron resonance (ECR) RIE base contact etch from an AlInAs/GalnAs HBT process will be given. The relative merits of reflection-based wafer sensors vs. process state sensors (optical emission spectroscopy and mass spectroscopy) will be discussed. The unique opportunities and problems associated with the III-V materials and required etch processes will be contrasted to implementation of advanced wafer state endpoint detection schemes in Si and flat panel display processes. Specific problems and solutions from our research which I will discuss include chamber seasoning effects on the drift of optical emission based endpoint detection schemes and signal processing techniques for accounting for this drift, modeling of the optical dielectric function of the compounds of interest vs. composition, and the effects of surface roughness on optical thickness measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 189
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Aspnes, D. E., Quinn, W. E., Tamargo, M. C., Pudensi, M. A. A., Schwarz, S. A., Brasil, M. J. S. P., Nahory, R. E., Gregory, S., Appl. Phys. Lett., 60, pp. 1244–6 (1992)Google Scholar
2 Maracas, G. N., Kuo, C. H., Anand-S, S., Droopad, R., Sohie, G. R. L., Levola, T. J Vac. Sci. Techn, A13 pp 727–32(1995)Google Scholar
3 Celli, F. G., Kao, Y. C., Moise, T. S., Woolsey, M., Harton, T. B., Haberman, K., Diagnostic Techniques for Semiconductor Materials Processing, Mater. Res. Soc, Pittsburgh, PA, USA; xv+585 pp 365–70 (1996).Google Scholar
4 Benson, J. D., Cornfeld, A. B., Martinka, M., Singley, K. M., Derzko, Z., Shorten, P. J., Dinan, J. H., Boyd, P. R., Wolfgram, F. C., Johs, B., He, P., Woollam, J.A., J. Electron. Mat. 25, pp. 1406–10 (1996)Google Scholar
5 Pickering, C., Carline, R. T., Hope, D. A. O., Robbins, D. J., Physica Status Solidi, A152; pp.95–102 1995)Google Scholar
6 Hafizi, M., Stanchina, W. E., Metzger, R. A., Jensen, J. F., Williams, F., IEEE Transactions on Electron Devices, 40, pp.2178–85 (1993).Google Scholar
7 Thomas, S. III., Ph.D. Dissertation, University of Michigan, 1997, and references therein.Google Scholar
8 Thomas, S. III, Chen, H. H., Hanish, C. K., Grizzle, J. W., Pang, S. W., J. Vac. Sci. Techn.. B14, pp.2531–6 (1996).Google Scholar
9 Delville, D. L., Budinavicius, J, Thompson, D. A., Simmons, J. G., Nuclear Instruments Methodsin Physics Research,-B106; pp. 179–82 (1995)Google Scholar
10 Hanish, C. K., Grizzle, J. W., Chen, H. H., Karnlet, L. I., Thomas, S. III, Terry, F. L. Jr, and Pang, S. W., J. Electron. Mat., 26, pp. 1401–8 (1997).Google Scholar
11 Vincent, T. L., Khargonekar, P. P., and Terry, F. L. Jr., SID/IEEE International Display Research Conference Digest, Toronto, Canada, September 15-19, 1997, pp. 274–7 (1997).Google Scholar
12 Kamlet, L. I. and Terry, F. L., Jr., Thin SolidFilms, 313–4, pp. 435–441 (1998).Google Scholar
13 Benson, T. E., Ramamoorthy, A., Kamlet, L. I., and Terry, F. L., Jr., Thin Solid Films, 313–4, pp. 177–182 (1998).Google Scholar