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Incorporation of Highly Concentrated Iron Impurities in InP by High Temperature Ion Implantation

Published online by Cambridge University Press:  01 February 2011

T. Cesca ,
A. Gasparotto ,
N. El Habra ,
A. Coati ,
B. Fraboni ,
F. Priolo ,
E.C. Moreira ,
G. Ciatto  and
C. Bocchi
T. Cesca
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
A. Gasparotto
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
N. El Habra
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
A. Coati
Affiliation:
INFM and University of Padova, Physics Dept., Via F. Marzolo 8, I-35131 Padova, Italy.
B. Fraboni
Affiliation:
INFM and University of Bologna, Physics Dept., V.le Berti-Pichat 6/2, I-40137 Bologna, Italy.
F. Priolo
Affiliation:
INFM and University of Catania, Physics Dept., Corso Italia 57, I-95129 Catania, Italy.
E.C. Moreira
Affiliation:
INFM and University of Catania, Physics Dept., Corso Italia 57, I-95129 Catania, Italy.
G. Ciatto
Affiliation:
CNR, GILDA, ESRF, BP 220, F-38043 Grenoble Cedex, France.
C. Bocchi
Affiliation:
CNR-Maspec, Parco Area delle Scienze 37/A, I-43100 Parma, Italy.
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Abstract

Iron was introduced in InP by ion implantation with the aim of obtaining a high concentration of substitutional, electrically active, deep level impurities. A substrate temperature higher than 200 °C was maintained during implantation in order to reduce damage accumulation and Fe defect reactions. The lattice position of the implanted Fe atoms and its modification during annealing treatments was studied by means of Proton Induced X-ray Emission (PIXE) in channeling conditions and correlated with the ion induced damage measured by different techniques. The results show that a high fraction of substitutional Fe atoms is present after the implantation. This fraction is progressively reduced during thermal treatments by increasing the annealing temperature, with the formation of inactive Fe aggregates, probably in the form of small Fe-P complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 719: Symposium F – Defect- and Impurity-Engineered Semiconductors and Devices III , 2002 , F10.2
Copyright
Copyright © Materials Research Society 2002

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