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Incorporation of Hydrogen in SiO2 and Si3N4 Thin Films Deposited by ECR-CVD

Published online by Cambridge University Press:  26 February 2011

J. Brown ,
M. Boudreau ,
M. Boumerzoug ,
P. Mascher ,
T. E. Jackman ,
S. Y. Tong  and
H. Haugen
J. Brown
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
M. Boudreau
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
M. Boumerzoug
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
P. Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
T. E. Jackman
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada, L8S 4L7. Institute for Microstructural Sciences, NRCC, Ottawa, Ontario, Canada, K1A 0R6.
S. Y. Tong
Affiliation:
Accelerator Laboratory and the Institute for Materials Research, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
H. Haugen
Affiliation:
Accelerator Laboratory and the Institute for Materials Research, McMaster University, Hamilton, Ontario, Canada, L8S 4L7.
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Abstract

Hydrogen incorporation in ECR-CVD silicon oxynitride films deposited using tris dimemylaminosilane (TDAS) as the silicon precursor was investigated. The as-deposited silicon dioxide films were shown to contain little hydrogen (<2%) as determined by both FTTR and nuclear reaction analysis (15N profiling). Films were obtained with high breakdown fields (>10 MV/cm) and low interface state densities (2×l011cm−2) on silicon without special surface preparation. Silicon nitride films were found to contain large hydrogen concentrations, both bonded and unbonded, which evolved from the film due to beam irradiation during 15N profiling. We were able to demonstrate that dilution of the nitrogen plasma with both hydrogen and argon was effective in avoiding problems of trace oxygen contamination and poor film adhesion, and reducing the hydrogen concentration in the nitride films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 1037
Copyright
Copyright © Materials Research Society 1995

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